Influence of the p -type doping concentration on reflection-mode GaN photocathode von Wang, Xiaohui, Chang, Benkang, Ren, Ling, Gao, Pin

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Theoretical study of Cs adsorption on GaN(0001) surface von Du, Yujie, Chang, Benkang, Wang, Xiaohui, Zhang, Junju, Li, Biao, Wang, Meishan

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Quantum efficiency of GaN photocathode under different illumination von Wang, Xiaohui, Chang, Benkang, Du, Yujie, Qiao, Jianliang

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Variation of spectral response for exponential-doped transmission-mode GaAs photocathodes in the preparation process von Zhang, Yijun, Niu, Jun, Zou, Jijun, Chang, Benkang, Xiong, Yajuan

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Electronic structure and optical properties of zinc-blende GaN von Du, Yujie, Chang, Benkang, Fu, Xiaoqian, Wang, Xiaohui, Wang, Meishan

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High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode von Guo, Xiangyang, Wang, Xiaohui, Chang, Benkang, Zhang, Yijun, Gao, Pin

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Research on electronic structure and optical properties of Mg doped Ga0.75Al0.25N von Yang, Mingzhu, Chang, Benkang, Hao, Guanghui, Shi, Feng, Wang, Honggang, Wang, Meishan

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Geometry and electronic structure of the Zn-doped GaAs (100) β2(2×4) surface: A first-principle study von Guo, Jing, Chang, Benkang, Jin, Muchun, Yang, Mingzhu, Wang, Honggang, Wang, MeiShan

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Photoemission from advanced heterostructured Al_xGa_1-xAs/GaAs photocathodes under multilevel built-in electric field von Feng, Cheng, Zhang, Yijun, Qian, Yunsheng, Chang, Benkang, Shi, Feng, Jiao, Gangcheng, Zou, Jijun

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Electronic structure of Zn doped Ga0.5Al0.5As photocathodes from first-principles von Yu, Xiaohua, Ge, Zhonghao, Chang, Benkang, Wang, Meishan

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Cs adsorption on Ga0.5Al0.5As(001)β2 (2×4) surface: A first-principles research von Yu, Xiaohua, Chang, Benkang, Chen, Xinlong, Xu, Yuan, Wang, Honggang, Wang, Meishan

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Theoretical study on electronic structure and optical properties of Ga0.75Al0.25N(0001) surface von Mingzhu, Yang, Benkang, Chang, Guanghui, Hao, Jing, Guo, Honggang, Wang, Meishan, Wang

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First principles research on electronic structure of Zn-doped Ga0.5Al0.5As (001) β2 (2×4) surface von Yu, Xiaohua, Chang, Benkang, Wang, Honggang, Wang, Meishan

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Theoretical study on optoelectronic properties of Ga0.75Al0.25N (001) reconstruction surfaces von Yang, Mingzhu, Chang, Benkang, Guo, Jing, Hao, Guanghui, Shi, Feng, Wang, Honggang, Wang, Meishan

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The adsorption of Cs and residual gases on Ga0.5Al0.5As (001) β2 (2 × 4) surface: A first principles research von Yu, Xiaohua, Du, Yujie, Chang, Benkang, Wang, Honggang, Wang, Meishan

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First principles calculations of the electronic structure and optical properties of (001), (011) and (111) Ga0.5Al0.5As surfaces von Yu, Xiaohua, Ge, Zhonghao, Chang, Benkang, Wang, Meishan

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Study of Cs adsorption on Ga(Mg)0.75Al0.25N (0001) surface: A first principle calculation von Yang, Mingzhu, Chang, Benkang, Hao, Guanghui, Guo, Jing, Wang, Honggang, Wang, Meishan

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Theoretical study on electronic and optical properties of In0.53Ga0.47As (100) β2 (2 × 4) surface von Guo, Jing, Chang, Benkang, Jin, Muchun, Yang, Mingzhu, Wang, Honggang, Wang, MeiShan, Huang, Jiacai, Zhou, Lei, Zhang, Yijun

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Angle-dependent XPS study of the mechanisms of “high–low temperature” activation of GaAs photocathode von Du, Xiaoqing, Chang, Benkang

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Resolution properties of reflection-mode exponential-doping GaAs photocathodes von Wang, Honggang, Qian, Yunsheng, Du, Yujie, Chen, Xinlong, Liu, Jian, Chang, Benkang

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