Measurement of ultrafast carrier dynamics in epitaxial graphene von Dawlaty, Jahan M., Shivaraman, Shriram, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G.

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Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders von Alam, Md Didarul, Gaevski, Mikhail, Jewel, Mohi Uddin, Mollah, Shahab, Mamun, Abdullah, Hussain, Kamal, Floyd, Richard, Simin, Grigory, Chandrashekhar, MVS, Khan, Asif

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Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene von George, Paul A, Strait, Jared, Dawlaty, Jahan, Shivaraman, Shriram, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G

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Electronic Properties of Bimetallic Metal–Organic Frameworks (MOFs): Tailoring the Density of Electronic States through MOF Modularity von Dolgopolova, Ekaterina A, Brandt, Amy J, Ejegbavwo, Otega A, Duke, Audrey S, Maddumapatabandi, Thathsara D, Galhenage, Randima P, Larson, Bryon W, Reid, Obadiah G, Ammal, Salai C, Heyden, Andreas, Chandrashekhar, Mvs, Stavila, Vitalie, Chen, Donna A, Shustova, Natalia B

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Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible von Dawlaty, Jahan M., Shivaraman, Shriram, Strait, Jared, George, Paul, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G., Veksler, Dmitry, Chen, Yunqing

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Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs von Mollah, Shahab, Gaevski, Mikhail, Hussain, Kamal, Mamun, Abdullah, Chandrashekhar, MVS, Simin, Grigory, Khan, Asif

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Ultrafast relaxation dynamics of hot optical phonons in graphene von Wang, Haining, Strait, Jared H., George, Paul A., Shivaraman, Shriram, Shields, Virgil B., Chandrashekhar, Mvs, Hwang, Jeonghyun, Rana, Farhan, Spencer, Michael G., Ruiz-Vargas, Carlos S., Park, Jiwoong

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Graphene/MoS₂ Thin Film Based Two Dimensional Barristors With Tunable Schottky Barrier for Sensing Applications von Jahangir, Ifat, Uddin, M. Ahsan, Singh, Amol K., Chandrashekhar, MVS, Koley, Goutam

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An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices von Floyd, Richard, Hussain, Kamal, Mamun, Abdullah, Gaevski, Mikhail, Simin, Grigory, Chandrashekhar, MVS, Khan, Asif

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High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides... von Mollah, Shahab, Hussain, Kamal, Floyd, Richard, Mamun, Abdullah, Gaevski, Mikhail, Chandrashekhar, MVS, Ahmad, Iftikhar, Simin, Grigory, Wheeler, Virginia, Eddy, Charles, Khan, Asif

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Comparison of raw accelerometry data from ActiGraph, Apple Watch, Garmin, and Fitbit using a mechanical shaker table von White, 3rd, James W, Finnegan, Olivia L, Tindall, Nick, Nelakuditi, Srihari, Brown, 3rd, David E, Pate, Russell R, Welk, Gregory J, de Zambotti, Massimiliano, Ghosal, Rahul, Wang, Yuan, Burkart, Sarah, Adams, Elizabeth L, Chandrashekhar, Mvs, Armstrong, Bridget, Beets, Michael W, Weaver, R Glenn

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Publisher's Note: “Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence” [Appl. P... von Jewel, Mohi Uddin, Alam, Md Didarul, Mollah, Shahab, Hussain, Kamal, Wheeler, Virginia, Eddy, Charles, Gaevski, Mikhail, Simin, Grigory, Chandrashekhar, MVS, Khan, Asif

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Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence von Jewel, Mohi Uddin, Alam, Md Didarul, Mollah, Shahab, Hussain, Kamal, Wheeler, Virginia, Eddy, Charles, Gaevski, Mikhail, Simin, Grigory, Chandrashekhar, MVS, Khan, Asif

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Heterometallic multinuclear nodes directing MOF electronic behavior von Ejegbavwo, Otega A, Berseneva, Anna A, Martin, Corey R, Leith, Gabrielle A, Pandey, Shubham, Brandt, Amy J, Park, Kyoung Chul, Mathur, Abhijai, Farzandh, Sharfa, Klepov, Vladislav V, Heiser, Brittany J, Chandrashekhar, Mvs, Karakalos, Stavros G, Smith, Mark D, Phillpot, Simon R, Garashchuk, Sophya, Chen, Donna A, Shustova, Natalia B

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Emission of terahertz radiation from SiC von Strait, Jared H., George, Paul A., Dawlaty, Jahan, Shivaraman, Shriram, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G.

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Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene von Rana, Farhan, George, Paul A., Strait, Jared H., Dawlaty, Jahan, Shivaraman, Shriram, Chandrashekhar, Mvs, Spencer, Michael G.

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Purification and mechanical nanosizing of Eu-doped GaN von Thomas, Tiju, Guo, Xiaomei, Chandrashekhar, MVS, Poitras, Carl B., Shaff, William, Dreibelbis, Mark, Reiherzer, Jesse, Li, Kewen, DiSalvo, Francis J., Lipson, Michal, Spencer, M.G.

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High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates von Muhtadi, Sakib, Seong Mo Hwang, Coleman, Antwon, Asif, Fatima, Simin, Grigory, Chandrashekhar, Mvs, Khan, Asif

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Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes von Floyd, Richard, Gaevski, Mikhail, Hussain, Kamal, Mamun, Abdullah, Chandrashekhar, MVS, Simin, Grigory, Khan, Asif

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Improved Charge Transport in PbS Quantum Dot Thin Films following Gel Permeation Chromatography Purification von Ahmed, Fiaz, Kelley, Mathew L, Chandrashekhar, MVS, Greytak, Andrew B

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