MaGe: a Monte Carlo framework for the Gerda and Majorana double beta decay experiments von Bauer, M, Belogurov, S, Chan, Yd, Descovich, M, Detwiler, J, Marco, M Di, Fujikawa, B, Franco, D, Gehman, V, Henning, R, Hudek, K, Johnson, R, Jordan, D, Kazkaz, K, Klimenko, A, Knapp, M, Kroeninger, K, Lesko, K, Liu, X, Marino, M, Mokhtarani, A, Pandola, L, Perry, M, Poon, A, Radford, D, Tomei, C, Tull, C

Volltext

Search for Strange Matter by Heavy Ion Activation von Isaac, M. C. Perillo, Chan, Y. D., Clark, R., Deleplanque, M. A., Dragowsky, M. R., Fallon, P., Goldman, I. D., Larimer, R-M., Lee, I. Y., Macchiavelli, A. O., MacLeod, R. W., Nishiizumi, K., Norman, E. B., Schroeder, L. S., Stephens, F. S.

Volltext

Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n -channel transistors: Latent defects and passivation/depassivation of defects by hydrogen von Awadelkarim, O. O., Fonash, S. J., Mikulan, P. I., Chan, Y. D.

Volltext

Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal–oxide–silicon field-effect transistors von Trabzon, L., Awadelkarim, O. O., Werking, J., Bersuker, G., Chan, Y. D.

Volltext

Observation of a new type of plasma etching damage: Damage to N -channel transistors arising from inductive metal loops von Salah, A., Awadelkarim, O. O., Preuninger, F., Chan, Y. D.

Volltext

Threshold voltage degradation in plasma-damaged CMOS transistors — Role of electron and hole traps related to charging damage von Brożek, Tomasz, David Chan, Y., Viswanathani, Chand R.

Volltext

Hole trap generation in the gate oxide due to plasma-induced charging von Brozek, T., Chan, Y.D., Viswanathan, C.R.

Volltext

Temperature accelerated gate oxide degradation under plasma-induced charging von Brozek, T., Chan, Y.D., Viswanathan, C.R.

Volltext

Electrical properties of contact etched p -Si: A comparison between magnetically enhanced and conventional reactive ion etching von Awadelkarim, O. O., Mikulan, P. I., Gu, T., Reinhardt, K. A., Chan, Y. D.

Volltext

Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure von Okandan, M., Fonash, S.J., Awadelkarim, O.O., Chan, Y.D., Preuninger, F.

Volltext

Impact of polysilicon dry etching on 0.5 μm NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage von Gu, T., Okandan, M., Awadelkarim, O.O., Fonash, S.J., Rembetski, J.F., Aum, P., Chan, Y.D.

Volltext

Using SEMATECH electrical test structures in assessing plasma induced damage in poly etching von CHAN, Y. D

Volltext

Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching von Okandan, M., Fonash, S.J., Ozaita, M., Preuninger, F., Chan, Y.D., Werking, J.

Volltext

Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching von Gu, T., Awadelkarim, O.O., Fonash, S.J., Chan, Y.D.

Volltext

Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions von Brożek, Tomasz, Chan, Y.David, Viswanathan, Chand R

Volltext

Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFETs von Trabzon, L., Awadelkarim, O.O., Werking, J., Bersuker, G., Chan, Y.D.

Volltext

Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing von Awadelkarim, O.O., Fonash, S.J., Mikulan, P.I., Ozaita, M., Chan, Y.D.

Volltext

A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures von Jiang, J., Awadelkarim, O.O., Chan, Y.D.

Volltext

Electronic states created in p-Si subjected to plasma etching : the role of inherent impurities, point defects, and hydrogen von AWADELKARIM, O. O, GU, T, MIKULAN, P. I, DITIZIO, R. A, FONASH, S. J, REINHARDT, K. A, CHAN, Y. D

Volltext

PROJECTILE BREAKUP OF O-16 AT 32.5 MEV/A - COMPARISON OF A CLASSICAL DYNAMIC-MODEL WITH EXPERIMENT von SURO, J, CHAN, YD, SCARPACI, JA, STOKSTAD, RG

Volltext