Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H–SiC von Siad, M., Abdesselam, M., Souami, N., Chami, A.C.

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Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC von Siad, M., Vargas, C. Pineda, Nkosi, M., Saidi, D., Souami, N., Daas, N., Chami, A.C.

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Role of carbon in the formation of ohmic contact in Ni/4HSiC and Ni/Ti/4HSiC von Siad, M., Abdesslam, M., Chami, A.C.

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The effect of charge state on electron excitation by slow protons in simple metal von Marouf, S., Boudouma, Y., Chami, A.C.

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Role of carbon in the formation of ohmic contact in Ni/4H—SiC and Ni/Ti/4H—SiC von SIAD, M, ABDESSLAM, M, CHAMI, A. C

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Scattering of low-energy ions from a solid surface: Transport theory calculation of the reflection coefficient von Khalal-Kouache, K., Mekhtiche, A., Chami, A.C., Boudjema, M.

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Monte Carlo simulation of electron emission from aluminum after low energy protons impact von Marouf, S., Chami, A.C., Boudouma, Y.

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Safety profile, electrical performances and clinical outcomes of a novel leadless pacemaker; first results from real-world clinical practice in Saudi Arabia von Sweidan, R S, Bokhari, F B, Chami, A C, Grammatico, A G, Al-Samadi, F A

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Image potential effect on the specular reflection coefficient of alkali ions scattered from a nickel surface at low energy von Zemih, R., Boudjema, M., Benazeth, C., Boudouma, Y., Chami, A.C.

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Angular, energy and charge distribution in the scattering of low-energy helium ions by an amorphous silicon surface von Arezki, B, Boudouma, Y, Benoit-Cattin, P, Chami, A C, Benazeth, C, Khalal, K, Boudjema, M

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FTIR analysis of polyethylene terephthalate irradiated by MeV He von Djebara, M., Stoquert, J.P., Abdesselam, M., Muller, D., Chami, A.C.

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Stopping of 0.3 - 1.2 MeV/u protons and alpha particles in Si von Abdesselam, M, Ouichaoui, S, Azzouz, M, Chami, A C, Siad, M

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Light particle spectroscopy using CR-39 detectors: An experimental and simulation study von Elazhar, H., Chami, A.C., Abdesselam, M., Arbor, N., Muller, D., Nasreddine, A., Roumie, M., El Bitar, Z., Nourreddine, A.

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GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers von Aggar, L., Bradai, D., Bourezg, Y.I., Abdesselam, M., Chami, A.C., Mocuta, C., Thiaudiere, D., Speisser, C., Muller, D., Bouillet, C., Le Normand, F.

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Epitaxial growth of rare earths and rare-earth compounds on II–VI semiconductors von Daudin, B., Gros, P., Ligeon, E., Chami, A.C.

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Gold-thiolate cluster emission from SAMs under keV ion bombardment: Experiments and molecular dynamics simulations von Arezki, B., Delcorte, A., Chami, A.C., Garrison, B.J., Bertrand, P.

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MeV H+ ion irradiation effect on the stoichiometry of polyethylene terephthalate films von Abdesselam, M., Muller, D., Djebara, M., Ouichaoui, S., Chami, A.C.

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Development of calibration procedure of an electronic portal imaging device a-Si1000 used for IMRT and VMAT von Maachou, A., Toutaoui, A. E. K., Toutaoui-Khelassi, N., Louelh, R., Brahimi-Sakhri, Z., Chami, A. C.

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Evidence of an interfacial layer formation during rare-earth deposition onto CdTe : the case of Sm von CHAMI, A. C, DAUDIN, B, FONTENILLE, J, GROS, P, LIGEON, E

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Sputtering yields, range and range straggling in Al following Kr+ ions bombardment in the energy range (20–160)keV von Mammeri, S., Ouichaoui, S., Zemih, R., Ammi, H., Abdesselam, M., Chami, A.C.

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