nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm von Kulikov, V. B., Maslov, D. V., Sabirov, A. R., Solodkov, A. A., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Shukov, I. V., Chaly, V. P.

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InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm von Dudin, A. L., Katsavets, N. I., Krasovitsky, D. M., Kokin, S. V., Chaly, V. P., Shukov, I. V.

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Technology development for GaN based power microwave DHFET von Alexeev, A N, Chaly, V P, Krasovitsky, D M, Mamaev, V V, Petrov, S I, Sidorov, V G, Arcebashev, N S

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Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures von Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P., Mamaev, V. V., Sidorov, V. G.

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Features and benefits of III-N growth by ammonia-MBE and plasma assisted MBE von Alexeev, A N, Chaly, V P, Krasovitsky, D M, Mamaev, V V, Petrov, S I, Sidorov, V G

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Growth of high quality III-N heterostructures using specialized MBE system von Petrov, S. I., Alexeev, A. N., Krasovitsky, D. M., Chaly, V. P.

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Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE von Aleksandrov, S. B., Baranov, D. A., Chaly, V. P., Krasovitsky, D. M., Pavlenko, M. V., Petrov, S. I., Pogorelsky, Yu. V., Sokolov, I. A., Sokolov, M. A., Velikovsky, L. E., Podolskaya, N. I., Bulashevich, K. A., Karpov, S. Yu

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Photosensitivity of structures with quantum wells under normal radiation incidence von Kulikov, V. B., Chaly, V. P.

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nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 [mu]m von Kulikov, V. B, Maslov, D. V, Sabirov, A. R, Solodkov, A. A, Dudin, A. L, Katsavets, N. I, Kogan, I. V

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A degradation rate study of MBE-grown high-power AlGaAs laser diodes von Chaly, V P, Etinberg, M I, Fokin, G A, Karpov, S Yu, Myachin, V, Ostrovsky, A Yu, Pogorelsky, Yu V, Rusanovich, I Yu, Sokolov, A, Shcurko, A P, Strugov, N A, Ter-Martirosyan, A L

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Mechanisms of optical confinement in phase-locked laser arrays von Chaly, V P, Karpov, S Yu, Ter-Martirosyan, A L, Titov, D V, Guo, Wang Zhang

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Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures von Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P., Mamaev, V. V., Sidorov, V. G.

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Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy von Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P.

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Indium droplet formation during molecular beam epitaxy of InGaN von Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu

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Low Dislocation Density and High Mobility GaN Layers for DHFET Channels Grown on High-Temperature AlN/AlGaN Buffer Layer by Ammonia MBE von Krasovitsky, D.M., Chaly, V.P., Mamaev, V.V., Alexeev, A.N., Petrov, Stanislav I.

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High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures von Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skii, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P.

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The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia von Alexeev, A N, Borisov, B A, Chaly, V P, Demidov, D M, Dudin, A L, Krasovitsky, D M, Pogorelsky, Yu V, Shkurko, A P, Sokolov, I A, Stepanov, M V, Ter-Martirosyan, A L

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Use of molecular beam epitaxy for high-power AlGaAs laser production von Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu, Shkurko, A.P., Ter-Martirosyan, A.L.

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Electric microswitch with movable contact pin von A. P. POLTORAK, V. V. EMELYANENKO, V. V. MORGUNOV, V. I. SCHUTSKY, V. G. MIRONENKO, E. S. ROZENTAL, V. I. LITVINOV, V. A. KOSOVTSEV, F. P. CHALY, V. F. ZAGUBELJUK ET N. I. FILATOV

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Microswitch with contact pins von V. G. C. MIRONENKO, A. P. POLTORAK, V. I. SCHUTSKY, V. A. KOSOVTSEV, F. P. CHALY, V. F. ZAGUBELJUK, ET N. I. FILATOV

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