High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy von McSkimming, Brian M., Chaix, Catherine, Speck, James S.

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Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy von Okumura, Hironori, McSkimming, Brian M., Huault, Thomas, Chaix, Catherine, Speck, James S.

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE von Matta, Samuel, Brault, Julien, Korytov, Maxim, Phuong Vuong, Thi Quynh, Chaix, Catherine, Al Khalfioui, Mohamed, Vennéguès, Philippe, Massies, Jean, Gil, Bernard

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Plasma assisted molecular beam epitaxy of GaN with growth rates > 2.6 μm/h von MCSKIMMING, Brian M, WU, F, HUAULT, Thomas, CHAIX, Catherine, SPECK, James S

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Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 Amm/h von McSkimming, Brian, Wu, F, Huault, Thomas, Chaix, Catherine, Speck, James

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GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source von Cordier, Yvon, Damilano, Benjamin, Aing, Phannara, Chaix, Catherine, Linez, Florence, Tuomisto, Filip, Vennéguès, Philippe, Frayssinet, Eric, Lefebvre, Denis, Portail, Marc, Nemoz, Maud

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Plasma assisted molecular beam epitaxy of GaN with growth rates > 2.6 [mu]m/h von McSkimming, Brian M, Wu, F, Huault, Thomas, Chaix, Catherine, Speck, James S

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Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h von McSkimming, Brian M., Wu, F., Huault, Thomas, Chaix, Catherine, Speck, James S.

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Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h von McSkimming, Brian M., Wu, F., Huault, Thomas, Chaix, Catherine, Speck, James S.

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Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy von Cordier, Yvon, Natali, Franck, Chmielowska, Magdalena, Leroux, Mathieu, Chaix, Catherine, Bouchaib, Pierre

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Effect of arsenic pressure on donor and acceptor concentration in Si doped MBE GaAs layers von CHAIX, C, RADISSON, A, CONTOUR, J.-P, NEU, G

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Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus von VILLETTE JEROME, CHAIX CATHERINE, CASSAGNE VALERICK

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Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus von VILLETTE JEROME, CHAIX CATHERINE, CASSAGNE VALERICK

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Molecular beam epitaxy apparatus for producing wafers of semiconductor material von CASSAGNE, VALERICK, VILLETTE, JÉROME, CHAIX, CATHERINE

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Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus von CASSAGNE, VALERICK, VILLETTE, JÉROME, CHAIX, CATHERINE

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Molecular beam epitaxy apparatus for producing wafers of semiconductor material von CASSAGNE, VALERICK, CHAIX, CATHERINE, VILLETTE, JEROME

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Apparat til anbringelse af en tynd film af et materiale på et substrat og re-genereringsfremgangsmåde for et sådant apparat von CASSAGNE, VALERICK, CHAIX, CATHERINE, VILLETTE, JEROME

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VORRICHTUNG ZUR ABSCHEIDUNG EINER DÜNNSCHICHT AUS EINEM MATERIAL AUF EINEM SUBSTRAT UND REGENERATIONSVERFAHREN FÜR EINE SOLCHE VORRICHTUNG von CASSAGNE, VALERICK, CHAIX, CATHERINE, VILLETTE, JEROME

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Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus von CASSAGNE, VALERICK, CHAIX, CATHERINE, VILLETTE, JEROME

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MOLECULAR BEAM EPITAXY APPARATUS FOR PRODUCING WAFERS OF SEMICONDUCTOR MATERIAL von VILLETTE JEROME, CHAIX CATHERINE, CASSAGNE VALERICK

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