Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers von Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., López-Villanueva, J. A., Cartujo, P.

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Direct and trap-assisted elastic tunneling through ultrathin gate oxides von Jiménez-Molinos, F., Gámiz, F., Palma, A., Cartujo, P., López-Villanueva, J. A.

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Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors von Gámiz, F., Roldán, J. B., Carceller, J. E., Cartujo, P.

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Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers von Gámiz, F., Roldán, J. B., López-Villanueva, J. A., Cartujo-Cassinello, P., Carceller, J. E.

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Strained-Si on Si1-xGex MOSFET mobility model von Roldan, J.B, Gamiz, F, Cartujo-Cassinello, P, Cartujo, P, Carceller, J.E, Roldan, A

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Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration von Gámiz, F., Roldán, J. B., Godoy, A., Cartujo-Cassinello, P., Carceller, J. E.

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Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's von Gamiz, F., Lopez-Villanueva, J.A., Roldan, J.B., Carceller, J.E., Cartujo, P.

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Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers von Gámiz, F., Cartujo-Cassinello, P., Jiménez-Molinos, F., Carceller, J. E., Cartujo, P.

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Effects of the inversion-layer centroid on the performance of double-gate MOSFETs von Lopez-Villanueva, J.A., Cartujo-Cassinello, P., Gamiz, F., Banqueri, J., Palma, A.J.

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Effects of the inversion layer centroid on MOSFET behavior von Lopez-Villanueva, J.A., Cartujo-Casinello, P., Banqueri, J., Gamiz, F., Rodriguez, S.

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Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers von Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., Carceller, J. E., López-Villanueva, J. A., Rodriguez, S.

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Image and exchange-correlation effects in double gate silicon-on-insulator transistors von Gámiz, F, Cartujo-Cassinello, P, Jiménez-Molinos, F, Carceller, J.E, Cartujo, P

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Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs von Gámiz, F, Godoy, A, Roldán, J B, Carceller, J E, Cartujo, P

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Double gate silicon on insulator transistors. A Monte Carlo study von Gámiz, F., Roldán, J.B., Godoy, A., Carceller, J.E., Cartujo, P.

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Contribution of injection in current noise due to generation and recombination of carriers in p–n junctions von Tejada, J. A. Jiménez, Godoy, A., Palma, A., Cartujo, P.

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Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates von Gámiz, F., Cartujo-Cassinello, P., Roldán, J. B., Jiménez-Molinos, F.

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Universality of electron mobility curves in MOSFETs: a Monte Carlo study von Gamiz, F., Lopez-Villanueva, J.A., Banqueri, J., Carceller, J.E., Cartujo, P.

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Influence of technological parameters on the behavior of the hole effective mass in SiGe structures von Rodrı́guez, Salvador, Gámiz, F., Palma, A., Cartujo, P., Carceller, J. E.

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Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling von Roldan, J.B, Gamiz, F, Lopez-Villanueva, J.A, Cartujo, P, Godoy, A

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Electron transport in silicon-on-insulator devices von Gámiz, F, Roldán, J.B, López-Villanueva, J.A, Cartujo-Cassinello, P, Carceller, J.E, Cartujo, P, Jiménez-Molinos, F

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