Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode von Dubourdieu, Catherine, Bruley, John, Arruda, Thomas M., Posadas, Agham, Jordan-Sweet, Jean, Frank, Martin M., Cartier, Eduard, Frank, David J., Kalinin, Sergei V., Demkov, Alexander A., Narayanan, Vijay

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Charge Trap Transistor (CTT): An Embedded Fully Logic-Compatible Multiple-Time Programmable Non-Volatile Memory Element for High- k -Metal-Gate CMOS Technologies von Khan, Faraz, Cartier, Eduard, Woo, Jason C. S., Iyer, Subramanian S.

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A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications von Wu, Ernest, Ando, Takashi, Kim, Youngseok, Muralidhar, Ramachandran, Cartier, Eduard, Jamison, Paul, Wang, Miaomiao, Narayanan, Vijay

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Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis von Sahiner, Mehmet Alper, Vander Valk, Rory J., Steier, Joshua, Savastano, Jared, Kelty, Stephen, Ravel, Bruce, Woicik, Joseph C., Ogawa, Yohei, Schmidt, Kristin, Cartier, Eduard A., Jordan-Sweet, Jean L., Lavoie, Christian, Frank, Martin M.

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Pulse-Train Method to Measure Transient Response of Field-Effect Transistors von Jenkins, Keith A., Cartier, Eduard A., Yau, Jeng-Bang

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Origins of Effective Work Function Roll-Off Behavior for High-κ Last Replacement Metal Gate Stacks von Ando, Takashi, Cartier, Eduard A., Bruley, John, Choi, Kisik, Narayanan, Vijay

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Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- k Stacks von Kerber, A., Krishnan, S.A., Cartier, E.A.

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(Invited) The Past, Present and Future of High-k/Metal Gates von Choi, Kisik, Ando, Takashi, Cartier, Eduard A., Kerber, Andreas, Paruchuri, Vamsi, Iacoponi, John, Narayanan, Vijay

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Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks von Carr, Adra, Rozen, John, Frank, Martin M., Ando, Takashi, Cartier, Eduard A., Kerber, Pranita, Narayanan, Vijay, Haight, Richard

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On the Electron and Hole Tunneling in a HfO2 Gate Stack With Extreme Interfacial-Layer Scaling von ANDO, Takashi, SATHAYE, Ninad D, MURALI, Kota V. R. M, CARTIER, Eduard A

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Interfacial layer optimization of high- k/metal gate stacks for low temperature processing von Linder, Barry P., Narayanan, Vijay, Cartier, Eduard A.

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Application of VRS Methodology for the Statistical Assessment of BTI in MG/HK CMOS Devices von Kerber, Andreas, Cartier, Eduard

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Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy von Stellari, Franco, Wu, Ernest Y., Ando, Takashi, Cartier, Eduard, Frank, Martin M., Cabral, Cyril, Song, Peilin, Pfeiffer, Dirk

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High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment von Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay

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Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering von Fischetti, Massimo V., Neumayer, Deborah A., Cartier, Eduard A.

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Oxygen Transport in High-k Metal Gate Stacks and Physical Characterization by SIMS Using Isotopic Labeled Oxygen von Hopstaken, Marinus J., Bruley, John, Pfeiffer, Dirk, Copel, Matthew, Frank, Martin M., Cartier, Eduard, Ando, Takashi, Narayanan, Vijay

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Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With HfO2/TiN Gate Stacks von KERBER, Andreas, MAITRA, Kingsuk, MAJUMDAR, Amlan, HARGROVE, Mike, CARTIER, Eduard Albert

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The Impact of Self-Heating on Charge Trapping in High- k -Metal-Gate nFETs von Khan, Faraz, Cartier, Eduard, Kothandaraman, Chandrasekara, Scott, J. Campbell, Woo, Jason C. S., Iyer, Subramanian S.

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The Impact of Self-Heating on Charge Trapping in High-[Formula Omitted]-Metal-Gate nFETs von Khan, Faraz, Cartier, Eduard, Kothandaraman, Chandrasekara, Scott, J Campbell, Woo, Jason C S, Iyer, Subramanian S

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Stress-induced leakage current and defect generation in nFETs with HfO2/TiN gate stacks during positive-bias temperature stress von Cartier, E., Kerber, A.

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