The role of extrolites secreted by nonaflatoxigenic Aspergillus flavus in biocontrol efficacy von Moore, G.G., Lebar, M.D., Carter‐Wientjes, C.H.

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Volatile Trans-2-Hexenal, a Soybean Aldehyde, Inhibits Aspergillus flavus Growth and Aflatoxin Production in Corn von De Lucca, A.J., Carter-Wientjes, C.H., Boué, S., Bhatnagar, D.

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Effect of Soybean Volatile Compounds on Aspergillus flavus Growth and Aflatoxin Production von Cleveland, T.E, Carter-Wientjes, C.H, De Lucca, A.J, Boué, S.M

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Effect of Biotic Elicitors on Enrichment of Antioxidant Properties and Induced Isoflavones in Soybean von Boué, S.M, Shih, F.F, Shih, B.Y, Daigle, K.W, Carter-Wientjes, C.H, Cleveland, T.E

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Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image von Huang, X. R., Dudley, M., Vetter, W. M., Huang, W., Si, W., Carter Jr, C. H.

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High-purity semi-insulating 4H-SiC for microwave device applications von JENNY, J. R, MALTA, D. P, MÜLLER, St. G, POWELL, A. R, TSVETKOV, V. F, HOBGOOD, H. Mcd, GLASS, R. C, CARTER, C. H

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High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method von Jenny, J. R., Müller, St G., Powell, A., Tsvetkov, V. F., Hobgood, H. M., Glass, R. C., Carter, C. H.

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Induction of the Soybean Phytoalexins Coumestrol and Glyceollin by Aspergillus von Boué, Stephen M, Carter, Carol H, Ehrlich, Kenneth C, Cleveland, Thomas E

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White-beam synchrotron topographic studies of defects in 6H-SiC single crystals von Dudley, M, Wang, Shaoping, Huang, Wei, Jr, C H Carter, Tsvetkov, V F, Fazi, C

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The status of SiC bulk growth from an industrial point of view von Müller, St.G., Glass, R.C., Hobgood, H.M., Tsvetkov, V.F., Brady, M., Henshall, D., Jenny, J.R, Malta, D., Carter, C.H.

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A Kikuchi map for 6H α-SiC von Lane, J. E., Carter, C. H., More, K. L., Davis, R. F.

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Direct evidence of micropipe-related pure superscrew dislocations in SiC von Huang, X. R., Dudley, M., Vetter, W. M., Huang, W., Wang, S., Carter, C. H.

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Progress in SiC: from material growth to commercial device development von Carter, Jr, C.H., Tsvetkov, V.F., Glass, R.C., Henshall, D., Brady, M., Müller, St.G., Kordina, O., Irvine, K., Edmond, J.A., Kong, H.-S., Singh, R., Allen, S.T., Palmour, J.W.

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Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices von McD. Hobgood, H., Das, Mrinal K., Paisley, Michael J., Skowronski, Marek, Sumakeris, Joseph J., Müller, Stephan G., Ha, Seo Young, Palmour, John W., Carter Jr, Calvin H.

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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices von Jenny, Jason R., Calus, M.R., Tsvetkov, Valeri F., McD. Hobgood, H., Glass, R.C., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H.

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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances von Jenny, Jason R., Brady, M.F., McD. Hobgood, H., Calus, M.R., Tsvetkov, Valeri F., Leonard, R.T., Glass, R.C., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H.

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Progress in the industrial production of SiC substrates for semiconductor devices von Müller, St.G, Glass, R.C, Hobgood, H.M, Tsvetkov, V.F, Brady, M, Henshall, D, Malta, D, Singh, R, Palmour, J, Carter, C.H

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Large Diameter 4H-SiC Substrates for Commercial Power Applications von Burk, Albert A., Brady, M.F., Tsvetkov, Valeri F., McD. Hobgood, H., Leonard, R.T., Trussell, R., Glass, R.C., Müller, Stephan G., Sumakeris, Joseph J., Powell, Adrian R., Carter Jr, Calvin H.

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SiC Seeded Crystal Growth von Glass, R. C., Henshall, D., Tsvetkov, V. F., Carter Jr, C. H.

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Effects of annealing on carrier lifetime in 4H-SiC von Jenny, J. R., Malta, D. P., Tsvetkov, V. F., Das, M. K., Hobgood, H. McD, Carter, C. H., Kumar, R. J., Borrego, J. M., Gutmann, R. J., Aavikko, R.

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