A silicon metal-oxide-semiconductor electron spin-orbit qubit von Jock, Ryan M., Jacobson, N. Tobias, Harvey-Collard, Patrick, Mounce, Andrew M., Srinivasa, Vanita, Ward, Dan R., Anderson, John, Manginell, Ron, Wendt, Joel R., Rudolph, Martin, Pluym, Tammy, Gamble, John King, Baczewski, Andrew D., Witzel, Wayne M., Carroll, Malcolm S.

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High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism von Harvey-Collard, Patrick, D’Anjou, Benjamin, Rudolph, Martin, Jacobson, N. Tobias, Dominguez, Jason, Ten Eyck, Gregory A., Wendt, Joel R., Pluym, Tammy, Lilly, Michael P., Coish, William A., Pioro-Ladrière, Michel, Carroll, Malcolm S.

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Coherent coupling between a quantum dot and a donor in silicon von Harvey-Collard, Patrick, Jacobson, N. Tobias, Rudolph, Martin, Dominguez, Jason, Ten Eyck, Gregory A., Wendt, Joel R., Pluym, Tammy, Gamble, John King, Lilly, Michael P., Pioro-Ladrière, Michel, Carroll, Malcolm S.

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A silicon singlet–triplet qubit driven by spin-valley coupling von Jock, Ryan M., Jacobson, N. Tobias, Rudolph, Martin, Ward, Daniel R., Carroll, Malcolm S., Luhman, Dwight R.

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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon von Harvey-Collard, Patrick, Jacobson, N Tobias, Bureau-Oxton, Chloé, Jock, Ryan M, Srinivasa, Vanita, Mounce, Andrew M, Ward, Daniel R, Anderson, John M, Manginell, Ronald P, Wendt, Joel R, Pluym, Tammy, Lilly, Michael P, Luhman, Dwight R, Pioro-Ladrière, Michel, Carroll, Malcolm S

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Two-Level-System Dynamics in a Superconducting Qubit Due to Background Ionizing Radiation von Thorbeck, Ted, Eddins, Andrew, Lauer, Isaac, McClure, Douglas T., Carroll, Malcolm

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Electron spin decoherence in isotope-enriched silicon von Witzel, Wayne M, Carroll, Malcolm S, Morello, Andrea, Cywiński, Lukasz, Das Sarma, S

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Quantifying the Variation in the Number of Donors in Quantum Dots Created Using Atomic Precision Advanced Manufacturing von Campbell, Quinn T., Koepke, Justine C., Ivie, Jeffrey A., Mounce, Andrew M., Ward, Daniel R., Carroll, Malcolm S., Misra, Shashank, Baczewski, Andrew D., Bussmann, Ezra

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Publisher Correction: A silicon singlet–triplet qubit driven by spin-valley coupling von Jock, Ryan M., Jacobson, N. Tobias, Rudolph, Martin, Ward, Daniel R., Carroll, Malcolm S., Luhman, Dwight R.

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Publisher Correction: A silicon singlet–triplet qubit driven by spin-valley coupling von Jock, Ryan M., Jacobson, N. Tobias, Rudolph, Martin, Ward, Daniel R., Carroll, Malcolm S., Luhman, Dwight R.

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Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric von Rahman, Rajib, Nielsen, Erik, Muller, Richard P., Carroll, Malcolm S.

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Quantum decoherence of the central spin in a sparse system of dipolar coupled spins von Witzel, Wayne M., Carroll, Malcolm S., Cywiński, Łukasz, Das Sarma, S.

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Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot von Nguyen, Khoi T, Lilly, Michael P, Nielsen, Erik, Bishop, Nathan, Rahman, Rajib, Young, Ralph, Wendt, Joel, Dominguez, Jason, Pluym, Tammy, Stevens, Jeffery, Lu, Tzu-Ming, Muller, Richard, Carroll, Malcolm S

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Nanoscale interfacial engineering to grow Ge on Si as virtual substrates and subsequent integration of GaAs von Leonhardt, Darin, Sheng, Josephine, Cederberg, Jeffrey G., Li, Qiming, Carroll, Malcolm S., Han, Sang M.

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GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer von Cederberg, Jeffrey G., Leonhardt, Darin, Sheng, Josephine J., Li, Qiming, Carroll, Malcolm S., Han, Sang M.

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Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012) von KOESTER, Steven J, KING LIU, Tsu-Jae, HARTMANN, Jean-Michel, LOO, Roger, YEO, Yee-Chia, CARROLL, Malcolm S

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Implications of electronics constraints for solid-state quantum error correction and quantum circuit failure probability von Levy, James E, Carroll, Malcolm S, Ganti, Anand, Phillips, Cynthia A, Landahl, Andrew J, Gurrieri, Thomas M, Carr, Robert D, Stalford, Harold L, Nielsen, Erik

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Dynamics of superconducting qubit relaxation times von Carroll, M., Rosenblatt, S., Jurcevic, P., Lauer, I., Kandala, A.

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Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2 von LEONHARDT, Darin, SHENG, Josephine, CEDERBERG, Jeffrey G, CARROLL, Malcolm S, QIMING LI, ROMERO, Manual J, KUCIAUSKAS, Darius, FRIEDMAN, Daniel J, HAN, Sang M

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Coherent electron transport by adiabatic passage in an imperfect donor chain von Rahman, Rajib, Muller, Richard P., Levy, James E., Carroll, Malcolm S., Klimeck, Gerhard, Greentree, Andrew D., Hollenberg, Lloyd C. L.

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