Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors von Hallén, Anders, Nawaz, Muhammad, Zaring, Carina, Usman, Muhammad, Domeij, Martin, Östling, Mikael

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Large Area 1200 V SiC BJTs with β>100 and ρON<3 mΩcm2 von Domeij, Martin, Konstantinov, Andrei, Zaring, Carina, Reimark, Mats, Lindgren, Anders, Gumaelius, Krister

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Multivariate analysis method for energy calibration and improved mass assignment in recoil spectrometry von El Bouanani, Mohamed, Hult, Mikael, Persson, Leif, Swietlicki, Erik, Andersson, Margaretha, Östling, Mikael, Lundberg, Nils, Zaring, Carina, Cohen, David D, Dytlewski, Nick, Johnston, Peter N, Walker, Scott R, Bubb, Ian F, Whitlow, Harry J

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1200 V SiC BJTs with Low VCESAT and High Temperature Capability von Gumaelius, Krister, Keri, Imre, Reimark, Mats, Grenell, Hakan, Svedberg, Jan Olov, Konstantinov, Andrei O., Lindgren, Anders, Zaring, Carina, Domeij, Martin

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Operation of Silicon Carbide BJTs Free from Bipolar Degradation von Östling, Mikael, Gumaelius, Krister, Keri, Imre, Reimark, Mats, Svedberg, Jan Olov, Konstantinov, Andrei O., Zaring, Carina, Domeij, Martin

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Interfacial reaction studies of Cr, Ni, Ti, and Pt metallization on InP von Persson, Leif, El Bouanani, Mohamed, Hult, Mikael, Whitlow, Harry J., Andersson, Margaretha, Bubb, Ian F., Johnston, Peter N., Walker, Scott R., Cohen, David D., Dytlewski, Nick, Zaring, Carina, Östling, Mikael

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Assessment of High and Low Temperature Performance of SiC BJTs von Schupbach, Marcelo, Lee, H.S., Östling, Mikael, Bource, J., Nawaz, Muhammad, Zaring, Carina, Domeij, Martin

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2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability von Östling, Mikael, Gumaelius, Krister, Keri, Imre, Hammarlund, Bo, Reimark, Mats, Svedberg, Jan Olov, Konstantinov, Andrei O., Zaring, Carina, Nawaz, Muhammad, Lindgren, Anders, Domeij, Martin

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A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation von Nawaz, Muhammad, Permthamassin, Komet, Zaring, Carina, Willander, Magnus

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Separation of mass-overlapped time of flight–energy elastic recoil detection analysis data using Ryan and Jamieson's dynamic analysis method von Persson, Leif, Whitlow, Harry J, Bouanani, Mohamed El, Hult, Mikael, Andersson, Margaretha, Bubb, Ian F, Cohen, David D, Dytlewski, Nick, Johnston, Peter N, Walker, Scott R, Zaring, Carina, Östling, Mikael

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BIPOLAR JUNCTION TRANSISTOR IN SILICON CARBIDE WITH IMPROVED BREAKDOWN VOLTAGE von GUMAELIUS, KRISTER, REIMARK, MATS, DOMEIJ, MARTIN, ZARING, CARINA, KONSTANTINOV, ANDREI

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Formation of thin films of CoSi2 on GaAs von Hult, Mikael, Persson, Leif, El Bouanani, Mohamed, Whitlow, Harry J., Andersson, Margaretha, Östling, Mikael, Lundberg, Nils, Zaring, Carina, Georgsson, Kristina, Cohen, David D., Dytlewski, Nick, Johnston, Peter N., Walker, Scott R.

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Mass and energy dispersive elastic recoil detection studies of low temperature Si/Pd/GaAs and Si/Pd/Al xGa (1 − x) As interfacial reactions von Zhang, Yanwen, Hult, Mikael, Persson, Leif, Whitlow, Harry J., Andersson, Margaretha, Bubb, Ian F., El Bouanani, Mohamed, Johnston, Peter N., Walker, Scott R., Cohen, David D., Dytlewski, Nick, Östling, Mikael, Zaring, Carina

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Mass and energy dispersive elastic recoil detection studies of low temperature Si/Pd/GaAs and Si/Pd/AlxGa(1 − x)As interfacial reactions von Zhang, Yanwen, Hult, Mikael, Persson, Leif, Whitlow, Harry J., Andersson, Margaretha, Bubb, Ian F., El Bouanani, Mohamed, Johnston, Peter N., Walker, Scott R., Cohen, David D., Dytlewski, Nick, Östling, Mikael, Zaring, Carina

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Empirical characterisation of mass distribution broadening in ToF- E recoil spectrometry von Hult, Mikael, Bouanani, Mohamed El, Persson, Leif, Whitlow, Harry J., Andersson, Margaretha, Zaring, Carina, Östling, Mikael, Cohen, David D., Dytlewski, Nick, Bubb, Ian F., Johnston, Peter N., Walker, Scott R.

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RBS and recoil spectrometry analysis of CoSi2 formation on GaAs von Hult, Mikael, Whitlow, Harry J., Östling, Mikael, Lundberg, Nils, Zaring, Carina, Cohen, David D., Dytlewski, Nick, Johnston, Peter N., Walker, Scott R.

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Mass and energy dispersive recoil spectrometry of SixGe1−x grown by electron beam evaporation von Johnston, Peter N., Walker, Scott R., Bubb, Ian F., Cohen, David D., Dytlewski, Nick, Huit, Mikael, Whitlow, Harry J., Zaring, Carina, Östling, Mikael, Andersson, Margaretha

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Characterization of the static and dynamic behavior of a SiC BJT von Ahmed, M.M.R., Parker-Allotey, N-A., Mawby, P.A., Nawaz, Muhammed, Zaring, Carina

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Mass and energy dispersive recoil spectrometry of Si Ge1− grown by electron beam evaporation von Johnston, Peter N., Walker, Scott R., Bubb, Ian F., Cohen, David D., Dytlewski, Nick, Huit, Mikael, Whitlow, Harry J., Zaring, Carina, Östling, Mikael, Andersson, Margaretha

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Recoil spectrometry : ion accelerator based elemental characterisation of surface layers von WHITLOW, H. J, ANDERSSON, M, JOHNSTON, P. N, BUBB, I. F, WALKER, S. R, JOHANSON, E, HOGMARK, S, INGEMARSSON, P. A, HULT, M, PERSSON, L, MOHAMED EL BOUANANI, ÖSTLING, M, ZARING, C, LUNDBERG, N, COHEN, D. D, DYTLEWSKI, N

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