A study of gas sensing behavior of metal-graphene contact with transfer length method von Li, Quanfu, Liu, Weihua, Cao, Guiming, Li, Xin, Wang, Xiaoli

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2D Material Based Synaptic Devices for Neuromorphic Computing von Cao, Guiming, Meng, Peng, Chen, Jiangang, Liu, Haishi, Bian, Renji, Zhu, Chao, Liu, Fucai, Liu, Zheng

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Mimicking Neuroplasticity via Ion Migration in van der Waals Layered Copper Indium Thiophosphate von Chen, Jiangang, Zhu, Chao, Cao, Guiming, Liu, Haishi, Bian, Renji, Wang, Jinyong, Li, Changcun, Chen, Jieqiong, Fu, Qundong, Liu, Qing, Meng, Peng, Li, Wei, Liu, Fucai, Liu, Zheng

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The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications von Liu, Qing, Cui, Silin, Bian, Renji, Pan, Er, Cao, Guiming, Li, Wenwu, Liu, Fucai

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Recent progress in the synthesis of novel two-dimensional van der Waals materials von Bian, Renji, Li, Changcun, Liu, Qing, Cao, Guiming, Fu, Qundong, Meng, Peng, Zhou, Jiadong, Liu, Fucai, Liu, Zheng

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Developing fatigue-resistant ferroelectrics using interlayer sliding switching von Bian, Renji, He, Ri, Pan, Er, Li, Zefen, Cao, Guiming, Meng, Peng, Chen, Jiangang, Liu, Qing, Zhong, Zhicheng, Li, Wenwu, Liu, Fucai

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Controllable resistive switching behaviors in heteroepitaxial LaNiO3/Nb:SrTiO3 Schottky junctions through oxygen vacancies engineering von Zhang, Yong, Gao, Shunhua, Cao, Guiming, Ma, Chunrui, Nan, Hu, Liu, Ming

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Controllable resistive switching behaviors in heteroepitaxial LaNiO 3 /Nb:SrTiO 3 Schottky junctions through oxygen vacancies engineering von Zhang, Yong, Gao, Shunhua, Cao, Guiming, Ma, Chunrui, Nan, Hu, Liu, Ming

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Chemical environment dominated Fermi level pinning of a graphene gas sensor von Cao, Guiming, Liu, Xiaorong, Liu, Weihua, Li, Quanfu, Li, Xin, Wang, Xiaoli

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High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning von Bian, Renji, Cao, Guiming, Pan, Er, Liu, Qing, Li, Zefen, Liang, Lei, Wu, Qingyun, Ang, Lay Kee, Li, Wenwu, Zhao, Xiaoxu, Liu, Fucai

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Gas sensing performance of graphene-metal contact after thermal annealing von Wu, Haiyang, Li, Quanfu, Bu, Xiangrui, Liu, Weihua, Cao, Guiming, Li, Xin, Wang, Xiaoli

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2D Magnetic Fe 0.75 Ta 0.5 S 2 : Giant Exchange Bias with Broadband Photoresponse von Li, Changcun, Wu, Jiazhen, Bian, Renji, Cao, Guiming, Pan, Er, Liu, Zhijun, Yu, Jiachen, Hosono, Hideo, Liu, Fucai

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Synaptic Devices: 2D Material Based Synaptic Devices for Neuromorphic Computing (Adv. Funct. Mater. 4/2021) von Cao, Guiming, Meng, Peng, Chen, Jiangang, Liu, Haishi, Bian, Renji, Zhu, Chao, Liu, Fucai, Liu, Zheng

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2D Magnetic Fe0.75Ta0.5S2: Giant Exchange Bias with Broadband Photoresponse von Li, Changcun, Wu, Jiazhen, Bian, Renji, Cao, Guiming, Pan, Er, Liu, Zhijun, Yu, Jiachen, Hosono, Hideo, Liu, Fucai

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A fresh-bias photoresponse of graphene field-effect transistor: An electrical tunable fast dipole moment generation von Zhang, Yantao, Yuan, Yubin, Cao, Guiming, Han, Chuanyu, Li, Xin, Wang, Xiaoli, Zhang, Guohe, Geng, Li, Liu, Weihua

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Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide von Cao, Guiming, Liu, Xiaorong, Zhang, Yantao, Liu, Weihua, Deng, Minming, Chen, Guangbing, Zhang, Guohe, Li, Quanfu, Beka, Lemu Girma, Li, Xin, Wang, Xiaoli

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Solid-Ionic Memory in a van der Waals Heterostructure von Chen, Jieqiong, Guo, Rui, Wang, Xiaowei, Zhu, Chao, Cao, Guiming, You, Lu, Duan, Ruihuan, Zhu, Chao, Hadke, Shreyash Sudhakar, Cao, Xun, Salim, Teddy, Buenconsejo, Pio John S, Xu, Manzhang, Zhao, Xiaoxu, Zhou, Jiadong, Deng, Ya, Zeng, Qingsheng, Wong, Lydia H, Chen, Jingsheng, Liu, Fucai, Liu, Zheng

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Improve the transconductance of a graphene field-effect transistor by folding graphene into a wedge von Cao, Guiming, Liu, Weihua, Cao, Meng, Li, Xin, Zhang, Anping, Wang, Xiaoli, Chen, Bangdao

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2D semiconductor SnP2S6 as a new dielectric material for 2D electronics von Hu, Jiayi, Zheng, Anqi, Er Pan, Chen, Jiangang, Bian, Renji, Li, Jinyao, Liu, Qing, Cao, Guiming, Meng, Peng, Xian Jian, Molnar, Alexander, Vysochanskii, Yulian, Liu, Fucai

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Controllable resistive switching behaviors in heteroepitaxial LaNiO3/Nb:SrTiO3Schottky junctions through oxygen vacancies engineering von Zhang, Yong, Gao, Shunhua, Cao, Guiming, Ma, Chunrui, Nan, Hu, Liu, Ming

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