A simplified over-temperature protection structure for smart power ICs von Ding, Liqiang, Cai, Xiaowu, Xia, Ruirui, Zhao, Fazhan

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Large piezoelectric response in a family of metal-free perovskite ferroelectric compounds from first-principles calculations von Wang, Hui, Liu, Huihui, Zhang, Zeyu, Liu, Zihan, Lv, Zhenlong, Li, Tongwei, Ju, Weiwei, Li, Haisheng, Cai, Xiaowu, Han, Han

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An Area-Efficient Clamp Based on Transmission Gate Feedback Technology for Power Rail Electrostatic Discharge Protection von Xiaowu Cai, Beiping Yan, Xiao Huo

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Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process von Cai, Xiaowu, Wei, Junxiu, Liang, Chao, Gao, Zhe, Lv, Chuan

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Investigation on performance degradation mechanism of GaN p–i–n diode under proton irradiation von Tang, Yun, Wang, Lei, Cai, Xiaowu, Lu, Peng, Li, Bo

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A Novel Radiation-Hardened Level Shifter With dV/dt Noise Immunity for 600-V HVIC von Lu, Yu, Cai, Xiaowu, Dang, Jianying, Wang, Xupeng, Li, Bo

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A SEGR hardened trench gate DMOS with stepped source and optimized LOCOS structure von Zhang, Yanfei, Gong, Xueqin, Liu, Mengxin, Wen, Xiaoxia, Cai, Xiaowu

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A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC von Lu, Yu, Cai, Xiaowu, Lu, Jian, Pan, Longli, Dang, Jianying, Xie, Yafei, Wang, Xupeng, Li, Bo

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A Radiation-Hardened Overtemperature Protection Circuit Using a Dynamic Comparison Technique von Dang, Jianying, Cai, Xiaowu, Xie, Yafei, Wang, Xupeng, Lu, Yu, Wang, Shiping, Li, Bo

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Engineering Sb/Zn4(OH)6SO4·5H2O interfacial layer by in situ chemically reacting for stable Zn anode von Xu, Mingyang, Li, Jing, Wang, Liyuan, Wang, Zhitao, Wang, Mingyu, Li, Liangsheng, Cai, Xiaowu, Li, Linpo, Shangguan, Enbo

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Design and optimization considerations for bulk gate-all-around nanowire MOSFETs von Song, Yi, Xu, Qiuxia, Zhou, Huajie, Cai, Xiaowu

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ZnAl-layered double hydroxide nanosheets-coated ZnO@C microspheres with improved cycling performance as advanced anode materials for zinc-based rechargeable batteries von Shangguan, Enbo, Fu, Peiying, Ning, Sashuang, Wu, Chengke, Li, Jing, Cai, Xiaowu, Wang, Zhenhui, Wang, Mingyu, Li, Xiaoguang, Li, Quanmin

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A current reference with wide temperature operation range and low temperature drift von Ding, Liqiang, Cai, Xiaowu, Wang, Yang, Han, Zhengsheng, Li, Bo, Zhao, Fazhan

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CoAl-layered double hydroxide nanosheets-coated spherical nickel hydroxide cathode materials with enhanced high-rate and cycling performance for alkaline nickel-based secondary bat... von Shangguan, Enbo, Zhang, Huijie, Wu, Chengke, Cai, Xiaowu, Wang, Zhenhui, Wang, Mingyu, Li, Liangsheng, Wang, Gongke, Li, Quanmin, Li, Jing

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Fully Integrated 1.8 V Output 300 mA Load LDO with Fast Transient Response von Gao, Mali, Cai, Xiaowu, Gao, Yuexin, Xia, Ruirui, Li, Bo

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A precision current sensing circuit with chopper amplifier of symmetric topology von Han, Tian, Zhao, Fazhan, Fu, Ximing, Cai, Xiaowu, Yan, Weiwei, Zhao, Haitao, Zhao, Wenxin, Li, Bo

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A high reliability under-voltage lock out circuit for power driver IC von Ding, Liqiang, Cai, Xiaowu, Gao, Mali, Xia, Ruirui, Gao, Yuexin

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Design of compact-diode-SCR with low-trigger voltage for full-chip ESD protection von Gao, Yuexin, Cai, Xiaowu, Han, Zhengsheng, Zeng, Chuanbin, Xia, Ruirui, Tang, Yun, Gao, Mali, Li, Bo

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A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs von Dang, Jianying, Cai, Xiaowu, Pan, Longli, Shan, Liang, Lu, Yu, Xie, Yafei, Wang, XuPeng, Wang, Shiping, Li, Bo

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TID Effect of MOSFETs in SOI BCD Process and its Hardening Technique von Wang, Shiping, Li, Xiaojing, Cai, Xiaowu, Li, Duoli, Jin, Meichen, Lu, Peng, Zhu, Huiping, Zeng, Chuanbin, Tang, Yun, Xia, Ruirui, Wang, Lei, Li, Bo

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