Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories von Ielmini, Daniele, Nardi, Federico, Cagli, Carlo

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Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices von Russo, U., Ielmini, D., Cagli, C., Lacaita, A.L.

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Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices von Russo, U., Ielmini, D., Cagli, C., Lacaita, A.L.

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Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM von Ielmini, D., Nardi, F., Cagli, C.

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Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM von Long, Shibing, Perniola, Luca, Cagli, Carlo, Buckley, Julien, Lian, Xiaojuan, Miranda, Enrique, Pan, Feng, Liu, Ming, Suñé, Jordi

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Quantum-size effects in hafnium-oxide resistive switching von Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Cartoixà, Xavier, Rurali, Riccardo, Miranda, Enrique, Jiménez, David, Perniola, Luca, Liu, Ming, Suñé, Jordi

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A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown von Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Sune, Jordi

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Reset Statistics of NiO-Based Resistive Switching Memories von Shibing Long, Cagli, C., Ielmini, D., Ming Liu, Sune, J.

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Novel Computing Method for Short Programming Time and Low Energy Consumption in HfO2 Based RRAM Arrays von Sassine, Gilbert, Cagli, Carlo, Nodin, Jean-Francois, Molas, Gabriel, Nowak, Etienne

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Guest Editorial Special Section on the IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) von Cagli, Carlo, Smith, Stewart

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Special Section on the IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS) von Cagli, Carlo, Smith, Stewart

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Bilayer Metal-Oxide Conductive Bridge Memory Technology for Improved Window Margin and Reliability von Barci, Marinela, Perniola, Luca, Molas, Gabriel, Cagli, Carlo, Vianello, Elisa, Bernard, Mathieu, Roule, Anne, Toffoli, Alain, Cluzel, Jacques, De Salvo, Barbara

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Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices von Long, Shibing, Lian, Xiaojuan, Ye, Tianchun, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Sune, Jordi

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Pragmatic OxRAM compact model ready to use for design studies von Lacord, J., Cagli, C., Sandrini, J.

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Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS2-Based Conductive Bridge Memories von Palma, Giorgio, Vianello, Elisa, Molas, Gabriel, Cagli, Carlo, Longnos, Florian, Guy, Jérémy, Reyboz, Marina, Carabasse, Catherine, Bernard, Mathieu, Dahmani, Faiz, Bretegnier, Damien, Liebault, Jacques, Salvo, Barbara De

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Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices von Cagli, C., Nardi, F., Ielmini, D.

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Analysis and modeling of resistive switching statistics von Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Suñé, Jordi

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Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories von Ielmini, D., Nardi, F., Cagli, C., Lacaita, A.L.

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Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices von SHIBING LONG, XIAOJUAN LIAN, TIANCHUN YE, CAGLI, Carlo, PERNIOLA, Luca, MIRANDA, Enrique, MING LIU, SUNE, Jordi

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Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires von Cagli, Carlo, Nardi, Federico, Harteneck, Bruce, Tan, Zhongkui, Zhang, Yuegang, Ielmini, Daniele

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