Prospects of III-nitride optoelectronics grown on Si von Zhu, D, Wallis, D J, Humphreys, C J

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3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite? von Sun, Y. W., Liu, W., Hernandez, I., Gonzalez, J., Rodriguez, F., Dunstan, D. J., Humphreys, C. J.

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Elastic constants and critical thicknesses of ScGaN and ScAlN von Zhang, S., Fu, W. Y., Holec, D., Humphreys, C. J., Moram, M. A.

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Mechanical properties of graphene von Sun, Y. W., Papageorgiou, D. G., Humphreys, C. J., Dunstan, D. J., Puech, P., Proctor, J. E., Bousige, C., Machon, D., San-Miguel, A.

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What is red? On the chromaticity of orange-red InGaN/GaN based LEDs von Robin, Y., Pristovsek, M., Amano, H., Oehler, F., Oliver, R. A., Humphreys, C. J.

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The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law von Humphreys, C. J.

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The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures von Hammersley, S., Watson-Parris, D., Dawson, P., Godfrey, M. J., Badcock, T. J., Kappers, M. J., McAleese, C., Oliver, R. A., Humphreys, C. J.

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Carrier localization in the vicinity of dislocations in InGaN von Massabuau, F. C-P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovács, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E., Oliver, R. A.

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Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers von Choi, F. S., Griffiths, J. T., Ren, Chris, Lee, K. B., Zaidi, Z. H., Houston, P. A., Guiney, I., Humphreys, C. J., Oliver, R. A., Wallis, D. J.

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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem von Massabuau, F. C.-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., Kovács, A., Williams, T., Hopkins, M. A., Humphreys, C. J., Dawson, P., Dunin-Borkowski, R. E., Etheridge, J., Allsopp, D. W. E., Oliver, R. A.

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Critical thickness calculations for InGaN/GaN von Holec, D., Costa, P.M.F.J., Kappers, M.J., Humphreys, C.J.

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Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures von Massabuau, F. C.-P., Sahonta, S.-L., Trinh-Xuan, L., Rhode, S., Puchtler, T. J., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

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The effect of dislocations on the efficiency of InGaN/GaN solar cells von Zhang, Y., Kappers, M.J., Zhu, D., Oehler, F., Gao, F., Humphreys, C.J.

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Mg doping affects dislocation core structures in GaN von Rhode, S K, Horton, M K, Kappers, M J, Zhang, S, Humphreys, C J, Dusane, R O, Sahonta, S -L, Moram, M A

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Microstructural origins of localization in InGaN quantum wells von Oliver, R A, Bennett, S E, Zhu, T, Beesley, D J, Kappers, M J, Saxey, D W, Cerezo, A, Humphreys, C J

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Structure and strain relaxation effects of defects in InxGa1−xN epilayers von Rhode, S L, Fu, W Y, C-P, Massabuau F, Kappers, M J, McAleese, C, Oehler, F, Humphreys, C J, Dusane, R O, Sahonta S–L

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Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 von OLIVER, R. A, KAPPERS, M. J, SUMNER, J, DATTA, R, HUMPHREYS, C. J

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Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges von Oehler, F., Zhu, T., Rhode, S., Kappers, M.J., Humphreys, C.J., Oliver, R.A.

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The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures von Davies, M. J., Dawson, P., Massabuau, F. C.-P., Oliver, R. A., Kappers, M. J., Humphreys, C. J.

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Photoluminescence studies of cubic GaN epilayers von Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P.

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