Uncertainty improvement of geometrical thickness and refractive index measurement of a silicon wafer using a femtosecond pulse laser von Maeng, Saerom, Park, Jungjae, O, Byungsung, Jin, Jonghan

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Measurement of electrical resistance of thermoelectric materials with a temperature gradient using instant load-voltage analysis von Jeon, Hyeon-Gu, Song, Jae Yong, O, Byungsung, Kim, Yong-Gyoo

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Na‐Induced Conversion of a Notorious Fine‐Grained Residue Layer into a Working Absorber in Solution‐Processed CuInSe2 Devices von Moon, Jihyun, Rehan, Shanza, Rana, Tanka Raj, O, Byungsung, Ahn, Seung Kyu, Ahn, SeJin

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Observation of surface contamination layer by X‐ray reflectometry (XRR) analyses von Kim, Chang Soo, Jeon, Hyeon‐Gu, Jung, Young, Choi, Minhyuk, O, Byungsung, Kim, Ki‐Hong

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Structural variations of Si1−xCx and their light absorption controllability von Moon, Jihyun, Baik, Seung Jae, O, Byungsung, Lee, Jeong Chul

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New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy von Koo, T. K., O, Byungsung, Yu, Y.-M., Kim, D.-J., Kim, C.-S., Choi, Y. D., Lee, J. W., Yoon, M.-Y., Yu, P. Y., Kang, T. W.

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Photoluminescence characteristics of ZnTe epilayers von Yu, Young-Moon, Nam, Sungun, Lee, Ki-Seon, Choi, Yong Dae, O, Byungsung

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Band gap energy and exciton peak of cubic CdS/GaAs epilayers von Yu, Young-Moon, Kim, Kwan-mo, O, Byungsung, Lee, Ki-Seon, Choi, Yong Dae, Yu, Pyeong Yeol

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Influence of SiN buffer layer in GaN epilayers von Park, Seong-Eun, Lim, Sung-Mook, Lee, Cheul-Ro, Kim, Chang Soo, O, Byungsung

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Growth parameters for polycrystalline GaN on silica substrates by metalorganic chemical vapor deposition von Park, Seong-Eun, Kim, Dae-Jin, Woo, Shi-gwan, Lim, Sung-Mook, O, Byungsung

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Na‐Induced Conversion of a Notorious Fine‐Grained Residue Layer into a Working Absorber in Solution‐Processed CuInSe 2 Devices von Moon, Jihyun, Rehan, Shanza, Rana, Tanka Raj, O, Byungsung, Ahn, Seung Kyu, Ahn, SeJin

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Effect of Mn concentration on photoluminescence characteristics of Zn1-xMnxTe epilayers von YU, Young-Moon, O, Byungsung, YOON, Man-Young, JIN BAE KIM, YONG DAE CHOI

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Accurate determination of surface orientation of single-crystal wafers using high-resolution X-ray rocking curve measurements von Kim, Chang Soo, Bin, Seok Min, Jeon, Hyeon-Gu, O, Byungsung, Choi, Young Dae

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Epitaxial Growth of Hexagonal CdS on GaAs (111) Substrates von Koo, Tae-Kyoung, Park, Jae-Hwan, O, Byungsung, Kim, Chang-Soo, Yu, Young-Moon, Kim, Dae-Jung, Yoon, Man-Young, Choi, Yong Dae

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Effect of Mn composition on characterization of Zn1−xMnxSe epilayers von Yu, Y.-M., Kim, D. J., Lee, K.-J., Choi, Y. D., O, Byungsung, Lee, K.-S., Choi, I.-H., Yoon, M.-Y.

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Characterization and growth of ZnSTe epilayers by hot-wall epitaxy von Yu, Y.-M, Nam, S, Rhee, J.-K, O, Byungsung, Lee, K.-S, Choi, Y.D

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Characterization of polycrystalline GaN grown on silica glass substrates von Park, Seong-Eun, Lim, Sung-Mook, O, Byungsung

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Structural variations of Si1−xC x and their light absorption controllability von Moon, Jihyun, Baik, Seung Jae, O, Byungsung, Lee, Jeong Chul

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Exchange interactions in quantum well subbands von BANDARA, K. M. S. V, COON, D. D, BYUNGSUNG O, LIN, Y. F, FRANCOMBE, M. H

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Strain relaxation in InxGa1−xN epitaxial films grown coherently on GaN von Park, Seong-Eun, O, Byungsung, Lee, Cheul-Ro

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