Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes von Kim, Byung-Jae, Lee, Chongmin, Jung, Younghun, Hyeon Baik, Kwang, Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kim, Jihyun

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Fabrication of GaAs subwavelength structure (SWS) for solar cell applications von Kim, Byung-Jae, Kim, Jihyun

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Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide von Ahn, Shihyun, Kim, Byung-Jae, Lin, Yi-Hsuan, Ren, Fan, Pearton, Stephen J., Yang, Gwangseok, Kim, Jihyun, Kravchenko, Ivan I.

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Layer-by-layer AuCl3 doping of stacked graphene films von Oh, Sooyeoun, Kim, Byung-Jae, Kim, Jihyun

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Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes von Kim, Byung-Jae, Lee, Chongmin, Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Ren, Fan, Pearton, Stephen J., Kim, Jihyun

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Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing von Kim, Byung-Jae, Hwang, Ya-Hsi, Ahn, Shihyun, Zhu, Weidi, Dong, Chen, Lu, Liu, Ren, Fan, Holzworth, M. R., Jones, Kevin S., Pearton, Stephen J., Smith, David J., Kim, Jihyun, Zhang, Ming-Lan

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Fabrication of GaN nanorods by inductively coupled plasma etching via SiO2 nanosphere lithography von KIM, Byung-Jae, JUNG, Hyunjung, KIM, Hong-Yeol, BANG, Joona, KIM, Jihyun

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Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications von Kim, Byung-Jae, Mastro, Michael A., Jung, Hyunjung, Kim, Hong-Yeol, Kim, Sung Hyun, Holm, Ron T., Hite, Jennifer, Eddy, Charles R., Bang, Joona, Kim, Jihyun

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Energy and dose dependence of proton-irradiation damage in graphene von Yang, Gwangseok, Kim, Byung-Jae, Kim, Kyeounghak, Han, Jeong Woo, Kim, Jihyun

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Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors von Kim, Byung-Jae, Ahn, Shihyun, Ren, Fan, Pearton, Stephen J., Yang, Gwangseok, Kim, Jihyun

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Effect of Flow Blockage on the Coolability During Reflood in a 2×2 Rod Bundle von Moon, Sang-Ki, Choi, Hae-Seob, Youn, Young-Jung, Kim, Byung-Jae, Kim, Kihwan, Song, Chul-Hwa

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Single CdTe microwire photodetectors grown by close-spaced sublimation method von Yang, Gwangseok, Kim, Byung-Jae, Kim, Donghwan, Kim, Jihyun

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Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields von Park, Hyunik, Kim, Byung-Jae, Kim, Jihyun

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Three-Dimensional Multilayered Nanostructures with Controlled Orientation of Microdomains from Cross-Linkable Block Copolymers von Jung, Hyunjung, Hwang, Dongjune, Kim, Eunhye, Kim, Byung-Jae, Lee, Won Bo, Poelma, Justin E, Kim, Jihyun, Hawker, Craig J, Huh, June, Ryu, Du Yeol, Bang, Joona

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GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes von Kim, Byung-Jae, Yang, Gwangseok, Kim, Hong-Yeol, Baik, Kwang Hyeon, Mastro, Michael A, Hite, Jennifer K, Eddy, Jr, Charles R, Ren, Fan, Pearton, Stephen J, Kim, Jihyun

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Three-dimensional graphene foam-based transparent conductive electrodes in GaN-based blue light-emitting diodes von Kim, Byung-Jae, Yang, Gwangseok, Joo Park, Min, Seop Kwak, Joon, Hyeon Baik, Kwang, Kim, Donghwan, Kim, Jihyun

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Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering von Hays, David C., Gila, Brent P., Pearton, Stephen J., Kim, Byung-Jae, Ren, Fan, Jang, Tae Sung

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Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes von Kim, Byung-Jae, Mastro, Michael A, Hite, Jennifer, Eddy, Jr, Charles R, Kim, Jihyun

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Effect of a blockage length on the coolability during reflood in a 2×2 rod bundle with a 90% partially blocked region von Kim, Kihwan, Kim, Byung-Jae, Choi, Hae-Seob, Moon, Sang-Ki, Song, Chul-Hwa

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Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes von Kim, Byung-Jae, Hwang, Ya-Hsi, Ahn, Shihyun, Ren, Fan, Pearton, Stephen J., Kim, Jihyun, Jang, Tae Sung

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