Photoluminescence study of shallow impurities localization in transmutation doped GaAs von Bykovsky, V.A, Khit'ko, V.I, Shoh, V.F, Utenko, V.I

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Mapping of GaAs wafers by IR light diffraction and luminescence von Juodkazis, S., Vanagas, E., Netikšis, V., Petrauskas, M., Bykovsky, V.A., Utenko, V.I., Hitko, V.I.

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Influence of fast neutrons on the recombination and electrical properties of neutron transmutation doped gallium arsenide von Bykovsky, V.A., Karas, V.I., Shoh, V.F., Strzelecka, S., Hruban, A., Gladysz, M.

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Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals von Utenko, V.I., Haller, Eugene E., Hitko, V.I., Karpovich, L.M., Bykov, V.A., Emtsev, Valentin V., Dolgikh, N.I., Shoh, V.F.

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IAE-3 and IAE-6 high resolution photographic materials for recording laser radiation in the IR-region von Ryabova, R.V., Bykovsky, Yu.A., Elkhov, V.A., Larkin, A.I., Potapov, V.L., Gnatiuk, L.N., Gurari, M.L., Marchenko, S.N.

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