Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films von Pangal, K., Sturm, J. C., Wagner, S., Büyüklimanli, T. H.

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SIMS Analyses Of Ultra-Low Energy B Ion Implants In Si: Evaluation Of Profile Shape And Dose Accuracy von Magee, C W, Hockett, R S, Buyuklimanli, T H, Abdelrehim, I, Marino, J W

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Maximum Active Concentration of Ion-Implanted Phosphorus During Solid-Phase Epitaxial Recrystallization von Suzuki, Kunihiro, Tada, Yoko, Kataoka, Yuji, Kawamura, Kazuo, Nagayama, Tsutomu, Nagayama, Susumu, Magee, Charles W., Buyuklimanli, Temel H., Mueller, Dominik Christoph, Fichtner, Wolfgang, Zechner, Christoph

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Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si von Buyuklimanli, T. H., Magee, C. W., Marino, J. W., Walther, S. R.

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Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling von Büyüklimanli, Temel H., Marino, John W., Novak, Steven W.

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Quantification of SIMS data for multicomponent glasses von Bojan, V. J., Büyüklimanli, T. H., Pantano, C. G.

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SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy von Magee, C.W., Hockett, R.S., Büyüklimanli, T.H., Abdelrehim, I., Marino, J.W.

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Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0 deg using off-angle substrates von Suzuki, K, Tanahashi, K, Nagayama, S, Magee, C W, Buyuklimanli, T H, Iwamoto, E

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Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0 degree using off-angle substrates von Suzuki, K, Tanahashi, K, Nagayama, S, Magee, C W, Buyuklimanli, TH, Iwamoto, E

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High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS von Kimura, Kenji, Oota, Yukitoshi, Nakajima, Kaoru, Büyüklimanli, Temel H.

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XPS Studies of Polyhedral Linkages in Binary Fluoride Films von Buyuklimanli, T H, Simmons, J H

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Surface degradation of YBa2Cu3O7- delta superconductors on exposure to air and humidity von Büyüklimanli, TH, Simmons, JH

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Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Sia von Buyuklimanli, T. H., Magee, C. W., Marino, J. W., Walther, S. R.

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XPS studies of polyhedral linkages in binary fluoride films von Büyüklimanli, Temel H., Simmons, Joseph H.

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Surface degradation of YBa2Cu3O4-δ superconductors on exposure to air and humidity von BÜYÜKLIMANLI, T. H, SIMMONS, J. H

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Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough? von Magee, Charles W., Buyuklimanli, Temel H.

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Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)] von Magee, Charles W., Buyuklimanli, Temel H.

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Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy von Suzuki, Kunihiro, Kataoka, Yuji, Nagayama, Susumu, Magee, Charles W., Buyuklimanli, Temel H., Nagayama, Tsutomu

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Energy dependence of transient enhanced diffusion and defect kinetics von Saleh, Hugo, Law, Mark E., Bharatan, Sushil, Jones, Kevin S., Krishnamoorthy, Viswanath, Buyuklimanli, Temel

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Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0° using off-angle substrates von SUZUKI, Kunihiro, TANAHASHI, Katsuto, NAGAYAMA, Susumu, MAGEE, Charles W, BÜYÜKLIMANLI, Temel H, IWAMOTO, Eiji

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