Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators von Jain, F. C., Suarez, E., Gogna, M., Alamoody, F., Butkiewicus, D., Hohner, R., Liaskas, T., Karmakar, S., Chan, P.-Y., Miller, B., Chandy, J., Heller, E.

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