Computer simulation of high fluence oxygen profiles in silicon von Bussmann, U., Hemment, P.L.F.

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An Aryl Hydrocarbon Receptor Agonist Amplifies the Mitogenic Actions of Estradiol in Granulosa Cells: Evidence of Involvement of the Cognate Receptors von BUSSMANN, Ursula A, BUSSMANN, Leonardo E, BARANAO, J. Lino

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Layer thickness calculations for silicon-on-insulator structures formed by oxygen implantation von BUSSMANN, U, HEMMENT, P. L. F

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Formation of thin silicon films using low energy oxygen ion implantation von Robinson, A.K., Marsh, C.D., Bussmann, U., Kilner, J.A., Li, Y., Vanhellemont, J., Reeson, K.J., Hemment, P.L.F., Booker, G.R.

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Buried insulator formation by nitrogen implantation at elevated temperatures von Hatzopoulos, N., Bussmann, U., Robinson, A.K., Hemment, P.L.F.

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Computer simulation of SIMOX and SIMNI formed by low-energy ion implantation von Zuoyu, Shi, Chenglu, Lin, Wenhua, Zhu, Hemment, P.L.F., Bussmann, U., Shichang, Zou

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The effect of dose and temperature on the as-implanted microstructure of oxygen-implanted silicon von Hatzopoulos, N., Chater, R., Bussmann, U., Hemment, P.L.F., Kilner, J.A.

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Silicon-on-insulator device islands formed by oxygen implantation through patterned masking layers von BUSSMANN, U, ROBINSON, A. K, HEMMENT, P. L. F, CAMPISI, G. J

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Activin and follistatin in rat mammary gland von Bussmann, Ursula A, Lanuza, Guillermo M, Bussmann, Leonardo E

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Si3N4 crystallization during high temperature nitrogen implantation into silicon von Bussmann, U., Meerbach, F.H.J., Te Kaat, E.H.

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Dynamic modelling of high dose oxygen profiles in SIMOX substrates von Bussmann, U., Hemment, P.L.F., Webb, R.P., Robinson, A.K.

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Oxygen implantation through patterned masks: a method for forming insulated silicon device islands while maintaining a planar wafer surface von Bussmann, U., Hemment, P.L.F., Robinson, A.K., Starkov, V.V.

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An investigation of Si0.5Ge0.5 alloy oxidation by high dose oxygen implantation von Castle, J.E., Liu, H.D., Watts, J.F., Zhang, J.P., Hemment, P.L.F., Bussmann, U., Robinson, A.K., Newstead, S.M., Powell, A.R., Whall, T.E., Parker, E.H.C.

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Behavior of high dose O+-implanted Si/Ge/Si structures von ZHANG, J. P, TANG, Y. S, ROBINSON, A. K, BUSSMANN, U, HEMMENT, P. L. F, SEALY, B. J, NEWSTEAD, S. M, POWELL, A. R, WHALL, T. E, PARKER, E. H. C

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Si 3N 4 crystallization during high temperature nitrogen implantation into silicon von Bussmann, U., Meerbach, F.H.J., Te Kaat, E.H.

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Formation of ß-Si 3N 4 during high temperature nitrogen implantation von Bussmann, U., Meerbach, F.H.J., Te Kaat, E.H.

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Energy and dose dependence of silicon top layer and buried oxide layer thicknesses in SIMOX substrates von Bussmamnn, U., Robinson, A.K., Hemment, P.L.F.

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Formation of beta -Si sub 3 N sub 4 During High Temperature Nitrogen Implantation von Bussmann, U, Meerbach, F H J, Kaat, E H T

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Ranges and electronic stopping powers of 1–24 MeV 12C and 14N ions in Si targets from optical reflectivity measurements on bevelled samples von Bussmann, U., Hecking, N., Heidemann, K.F., Te Kaat, E.

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Formation of ß-Si3N4 during high temperature nitrogen implantation von Bussmann, U., Meerbach, F.H.J., Te Kaat, E.H.

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