Multiferroic Materials Based on Organic Transition-Metal Molecular Nanowires von Wu, Menghao, Burton, J. D, Tsymbal, Evgeny Y, Zeng, Xiao Cheng, Jena, Puru

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Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles von Velev, Julian P, Duan, Chun-Gang, Burton, J. D, Smogunov, Alexander, Niranjan, Manish K, Tosatti, Erio, Jaswal, S. S, Tsymbal, Evgeny Y

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Organic Multiferroic Tunnel Junctions with Ferroelectric Poly(vinylidene fluoride) Barriers von López-Encarnación, Juan M, Burton, J. D, Tsymbal, Evgeny Y, Velev, Julian P

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Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier von Liu, Xiaohui, Burton, J D, Tsymbal, Evgeny Y

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Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface von Burton, J D, Tsymbal, E Y

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Hydroxyl-decorated graphene systems as candidates for organic metal-free ferroelectrics, multiferroics, and high-performance proton battery cathode materials von Wu, Menghao, Burton, J. D., Tsymbal, Evgeny Y., Zeng, Xiao Cheng, Jena, Puru

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Polarization-controlled Ohmic to Schottky transition at a metal/ferroelectric interface von Liu, Xiaohui, Wang, Yong, Burton, J. D., Tsymbal, Evgeny Y.

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Complex band structure of topologically protected edge states von Dang, Xiaoqian, Burton, J. D., Kalitsov, Alan, Velev, Julian P., Tsymbal, Evgeny Y.

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Prediction of electrically induced magnetic reconstruction at the manganite/ferroelectric interface von Burton, J. D., Tsymbal, E. Y.

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Magnetic gating of a 2D topological insulator von Dang, Xiaoqian, Burton, J D, Tsymbal, Evgeny Y

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Local currents in a 2D topological insulator von Dang, Xiaoqian, Burton, J D, Tsymbal, Evgeny Y

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Magnetoelectric interfaces and spin transport von Burton, J. D., Tsymbal, E. Y.

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Electric control of spin injection into a ferroelectric semiconductor von Liu, Xiaohui, Burton, J D, Zhuravlev, M Ye, Tsymbal, Evgeny Y

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Publisher's Note: Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier [Phys. Rev. Lett. 116, 197602 (2016)] von Liu, Xiaohui, Burton, J D, Tsymbal, Evgeny Y

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Highly spin-polarized conducting state at the interface between nonmagnetic band insulators: LaAlO3/FeS2 (001) von Burton, J D, Tsymbal, E Y

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50 years of the Wyoming ram test: How sheep have changed von Burton, D J, Ludden, P A, Stobart, R H, Alexander, B M

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Ferroelectric control of the magnetocrystalline anisotropy of the Fe/BaTiO3(001) interface von Lukashev, Pavel V, Burton, J D, Jaswal, Sitaram S, Tsymbal, Evgeny Y

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Ferroelectric instability under screened Coulomb interactions von Wang, Yong, Liu, Xiaohui, Burton, J D, Jaswal, Sitaram S, Tsymbal, Evgeny Y

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Effects of B and C doping on tunneling magnetoresistance in CoFe/MgO magnetic tunnel junctions von Chen, Andy Paul, Burton, J. D., Tsymbal, Evgeny Y., Feng, Yuan Ping, Chen, Jingsheng

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Evolution of the band alignment at polar oxide interfaces von Burton, J. D., Tsymbal, E. Y.

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