A model for charge transfer in buried-channel charge-coupled devices at low temperature von Banghart, E.K., Lavine, J.P., Trabka, E.A., Nelson, E.T., Burkey, B.C.

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Optical properties of phosphorus-doped polycrystalline silicon layers von Lubberts, G., Burkey, B. C., Moser, F., Trabka, E. A.

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Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers von LUBBERTS, G, BURKEY, B. C

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The effects of smear on antiblooming protection and dynamic range of interline CCD image sensors von Stevens, E.G., Lee, Y.-R., Burkey, B.C.

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A 1-Megapixel, progressive-scan image sensor with antiblooming control and lag-free operation von Stevens, E.G., Burkey, B.C., Nichols, D.N., Yee, Y.S., Losee, D.L., Lee, T.-H., Tredwell, T.J., Khosla, R.P.

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Threshold voltage in short-channel MOS devices von Viswanathan, C.R., Burkey, B.C., Lubberts, G., Tredwell, T.J.

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Characterization of generation currents in solid-state imagers von Hawkins, G.A., Trabka, E.A., Nielsen, R.L., Burkey, B.C.

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Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs von Lubberts, G., Burkey, B.C.

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Impact of edge effects on charge-packet-splitting accuracy von Bencuya, Selim S., Steckl, Andrew J., Burkey, B.C.

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Lateral motion of the inversion layer of MOS structures in regions of variable doping density and oxide thickness von Hawkins, G.A., Lavine, J.P., Trabka, E.A., Burkey, B.C.

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Photodetection by light-induced barrier modulation in Cu-diffused Au–CdS diodes von Lubberts, G., Burkey, B. C., Bücher, H. K., Wolf, E. L.

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Photodetection by barrier modulation in Cu-diffused Au/CdS junctions von Bücher, H. K., Burkey, B. C., Lubberts, G., Wolf, E. L.

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Steady-state photocarrier collection in silicon imaging devices von Lavine, J.P., Trabka, E.A., Burkey, B.C., Tredwell, T.J., Nelson, E.T., Anagnostopoulos, C.

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Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices von Lavine, J.P., Win-Chyi Chang, Anagnostopoulos, C.N., Burkey, B.C., Nelson, E.T.

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Reduction of lateral diffusion of photoelectrons in silicon photodiode imager arrays by internal gettering von Nelson, E.T., Anagnostopoulos, C.N., Lavine, J.P., Burkey, B.C.

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Channel potential and channel width in narrow buried-channel MOSFET's von Burkey, B.C., Lubberts, G., Trabka, E.A., Tredwell, T.J.

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Monte Carlo Simulation of the Photoelectron Crosstalk in Silicon Imaging Devices von Lavine, J.P., Win-Chyi Chang, Anagnostopoulos, C.N., Burkey, B.C., Nelson, E.T.

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Numerical studies of the charge capacity of surface-channel charge-coupled devices von Lavine, J.P., Burkey, B.C.

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Extensions of the Scharfetter-Gummel approach to charge transfer von Lavine, J.P., Burkey, B.C.

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A method for calculating band profile and capacitance of nonuniformly doped Schottky barriers von Lubberts, G., Burkey, B.C.

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