The Ion Charge Fluctuation Effect on Impurity Depth Distributions for High-Energy Ion Implantation. The Backward Transport Equation-Based Simulation von Burenkov, A. F., Komarov, F. F., Fedotov, S. A.

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Depth distribution of defects and impurities in diamond and cubic boron nitride after high-energy ion implantation von Burenkov, A. F., Varychenko, V. S., Zaitsev, A. M., Komarov, F. F., Konoplyanik, G. G., Melnikov, A. A., Stelmakh, V. F., Tkachev, V. V.

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The ion charge state fluctuation effect during high energy ion implantation: Monte Carlo simulation von Burenkov, A.F., Komarov, F.F., Fedotov, S.A.

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The transport equation approach for the simulation of charge state fluctuation effects during ion penetration into solids von Burenkov, A.F., Komarov, F.F., Fedotov, S.A.

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Line broadening of kumakhov radiation at planar channeling of electrons von Burenkov, A. F., Dudchik, Yu. I., Komarov, F. F.

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Range and spatial distribution of ion-implanted impurities in glasses von Deshkovskaya, A. A., Burenkov, A. F., Komarov, F. F.

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Calculation of the depth profiles associated with high energy ion implantation von Burenkov, A F, Komarov, F F

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Simulation of redistribution of donor impurity in silicon during rapid thermal annealing with regard for percolation effect von Burenkov, A. F., Komarov, F. F., Fedotov, S. A.

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Ion range distribution calculation based on a numerical solution of the boltzmann transport equation von Burenkov, A. F., Komarov, F. F., Temkin, M. M., Schlotzhauer, G.

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Z1-dependence of low energy heavy ion range parameters von Burenkov, A. F., Komarov, F. F., Temkin, M. M., Schlotzhauer, G.

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Interaction of high-energy ion beams with crystals von Komarov, F.F., Burenkov, A.F., Konoplyanik, G.G., Varichenko, V.S., Zaitsev, A.M., Kozyuchits, N.M., Karpovich, V.V.

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Collecting Si-probes for investigation of deuterium fluxes and energies in the tokamak scrape-off-layer von Grashin, S.A., Sokolov, Yu.A., Alimov, V.Kh, Gorodetsky, A.E., Zakharov, A.P., Kanashenko, S.L., Lomidze, M.A., Fomichev, A.I., Sharapov, V.M., Burenkov, A.F.

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Depth distributions of MeV-boron implanted into silicon von Burenkov, A. F., Komarov, F. F., Fedotov, S. A., Varichenko, V. S., Zaitsev, A. M., Kazyutchitz, N. M.

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Energy loss of charged particles in nonuniform electron gas von Burenkov, A.F., Komarov, F.F.

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Energy Loss of Charged Particles in Crystals von Burenkov, A. F., Komarov, F. F., Kumakhov, M. A.

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The effect of atomic chemical bonding under fast ion stopping in solids von Burenkov, A. F., Komarov, F. F.

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On the energy losses of charged particles in metals and semiconductors and the equipartition rule of Bohr von Burenkov, A.F., Komarov, F.F., Kumakhov, M.A.

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Energy loss of light ions in metals von Komarov, F. F., Burenkov, A. F.

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Elastic and inelastic energy deposition distributions during ion implantation in solids von Burenkov, A. F., Komarov, F. F., Temkin, M. M.

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Construction of highly asymmetric ion implantation profiles by pearson IV distribution von Burenkov, A. F., Komarov, F. F., Temkin, M. M.

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