Capacitively coupled electrolyte-conductivity sensor based on high-k material of barium strontium titanate von Huck, C., Poghossian, A., Bäcker, M., Chaudhuri, S., Zander, W., Schubert, J., Begoyan, V.K., Buniatyan, V.V., Wagner, P., Schöning, M.J.

Volltext

AREAL low energy electron beam applications in life and materials sciences von Tsakanov, V.M., Aroutiounian, R.M., Amatuni, G.A., Aloyan, L.R., Aslanyan, L.G., Avagyan, V.Sh, Babayan, N.S., Buniatyan, V.V., Dalyan, Y.B., Davtyan, H.D., Derdzyan, M.V., Grigoryan, B.A., Grigoryan, N.E., Hakobyan, L.S., Haroutyunian, S.G., Harutiunyan, V.V., Hovhannesyan, K.L., Khachatryan, V.G., Martirosyan, N.W., Melikyan, G.S., Petrosyan, A.G., Petrosyan, V.H., Sahakyan, A.A., Sahakyan, V.V., Sargsyan, A.A., Simonyan, A.S., Tatikyan, S.Sh, Tsakanova, G.V., Tsovyan, E., Vardanyan, A.S., Vardanyan, V.V., Yeremyan, A.S., Yeritsyan, H.N., Zanyan, G.S.

Volltext

Towards addressability of light-addressable potentiometric sensors: Shunting effect of non-illuminated region and cross-talk von Poghossian, A., Werner, C.F., Buniatyan, V.V., Wagner, T., Miamoto, K., Yoshinobu, T., Schöning, M.J.

Volltext

Capacitively coupled electrolyte-conductivity sensor based on high-k material of barium strontium titanate von Huck, C, Poghossian, A, Baecker, M, Chaudhuri, S, Zander, W, Schubert, J, Begoyan, V.K, Buniatyan, V.V, Wagner, Patrick Hermann, Schoening, M.J

Volltext

The I–V Characteristics of M–BaxSr1–xTiO3–M Thin Film Structures with Oxygen Vacancies. Part 1 von Buniatyan, V.V., Dastoyan, H.R.

Volltext

Chemical Sensors Based on a High-k Perovskite Oxide of Barium Strontium Titanate von Huck, C., Poghossian, A., Bäcker, M., Reisert, S., Schubert, J., Zander, W., Begoyan, V.K., Buniatyan, V.V., Schöning, M.J.

Volltext

A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps von Aroutiounian, V.M., Avetisyan, G.A., Buniatyan, V.V., Soukiassian, P.G., Buniatyan, Vaz.V.

Volltext

The I–V Characteristics of M–BaxSr1–xTiO3–M Thin Film Structures with Oxygen Vacancies. Part 2 von Buniatyan, V.V., Dashtoyan, H.R., Davtyan, A.A.

Volltext

Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels von Buniatyan, V.V., Gasparyan, F.V., Aroutiounian, V.V., Soukiassian, P.

Volltext

Silicon carbide TUNNETT diodes von Buniatyan, V.V, Aroutiounian, V.M, Zekentes, K, Camara, N, Soukiassian, P

Volltext

Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide von Camara, Nicolas, Zekentes, Konstantinos, Buniatyan, V.V., Aroutiounian, V.M., Soukiassian, P.

Volltext

Microwave characteristics of BARITT diodes based on silicon carbide von Aroutiounian, V.M., Buniatyan, V.V., Soukiassian, P.

Volltext

Microwave parameters of HTSC thin film RC circuit von Aroutiounian, V.M., Buniatyan, V.V.

Volltext bestellen

Optically controlled parametric effects in superconducting thin films von Buniatyan, V.V., Aroutiounian, V.M.

Volltext bestellen