Poisson Ratio of Epitaxial Germanium Films Grown on Silicon von Bharathan, Jayesh, Narayan, Jagdish, Rozgonyi, George, Bulman, Gary E.

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Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures von Bharathan, Jayesh, Zhou, Honghui, Narayan, Jagdish, Rozgonyi, George, Bulman, Gary E.

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Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition von Bharathan, Jayesh, Narayan, Jagdish, Rozgonyi, George, Bulman, Gary E.

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High Heat Flux, High Temperature Cooling of Electronics With Thermoelectric Devices von Bulman, Gary E., Thomas, Peter M., Krueger, Gordon, Venkatasubramanian, Rama, Marckx, Dallas A., Ratliff, Brian

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Three-Stage Thin-Film Superlattice Thermoelectric Multistage Microcoolers with a ΔTmax of 102 K von Bulman, Gary E., Siivola, Ed, Wiitala, Ryan, Venkatasubramanian, Rama, Acree, Michael, Ritz, Nathan

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Three-Stage Thin-Film Superlattice Thermoelectric Multistage Microcoolers with a ΔT max of 102 K von Bulman, Gary E., Siivola, Ed, Wiitala, Ryan, Venkatasubramanian, Rama, Acree, Michael, Ritz, Nathan

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Three-Stage Thin-Film Superlattice Thermoelectric Multistage Microcoolers with a [Delta] T^sub max^ of 102 K von Bulman, Gary E, Siivola, Ed, Wiitala, Ryan, Venkatasubramanian, Rama, Acree, Michael, Ritz, Nathan

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Improvement in leakage characteristics of Ge-on-Si photodetectors von Bharathan, J., Bulman, G. E.

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The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements von Bulman, G.E., Robbins, V.M., Stillman, G.E.

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DIODO EMISOR DE LUZ DE GEOMETRIA VERTICAL CON UNA CAPA ACTIVA DE NITRURO DEL GRUPO III Y VIDA UTIL AUMENTADA von KONG, HUA-SHUANG, BULMAN, GARY, E, EDMOND, JOHN, ADAM, DMITRIEV, VLADIMIR

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Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communications von Stillman, G.E., Cook, L.W., Bulman, G.E., Tabatabaie, N., Chin, R., Dapkus, P.D.

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SILCON-DOPED INYGAL-YAS LASER von BURNHAM, ROBERT D, BULMAN, GARY E

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Low-strain laser structures with group III nitride active layers von EDMOND, JOHN ADAM, BULMAN, GARY E, KONG, HUA-SHUANG

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VERTICAL GEOMETRY LIGHT EMITTING DIODE WITH GROUP III NITRIDE ACTIVE LAYER AND EXTENDED LIFETIME von KONG, HUA-SHUANG, EDMOND, JOHN ADAM, DMITRIEV, VLADIMIR, BULMAN, GARY E

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Low-strain laser structures with group III nitride active layers von BULMAN, GARY E, KONG, HUA-SHUANG, EDMOND, JOHN A

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LICHTEMITTIERENDE DIODE MIT EINER AKTIVEN SCHICHT AUS EINER NITRIDVERBINDUNG DER GRUPPE III, MIT VERTIKALER GEOMETRIE UND LÄNGERER LEBENSDAUER von KONG, HUA-SHUANG, BULMAN, GARY, E, EDMOND, JOHN, ADAM, DMITRIEV, VLADIMIR

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VERTICAL GEOMETRY LIGHT EMITTING DIODE WITH GROUP III NITRIDE ACTIVE LAYER AND EXTENDED LIFETIME von KONG, HUA-SHUANG, BULMAN, GARY, E, EDMOND, JOHN, ADAM, DMITRIEV, VLADIMIR

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VERTICAL GEOMETRY LIGHT EMITTING DIODE WITH GROUP III NITRIDE ACTIVE LAYER AND EXTENDED LIFETIME von KONG, HUA-SHUANG, BULMAN, GARY, E, EDMOND, JOHN, ADAM, DMITRIEV, VLADIMIR

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Vertical geometry light emitting diode with group III nitride active layer and extended lifetime von BULMAN, GARY E, KONG, HUA-SHUANG, DMITRIEV, VLADIMIR, EDMOND, JOHN A

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Vertical geometry light emitting diode with group iii nitride active layer and extended lifetime von VLADIMIR DMITRIEV, GARY E BULMAN, HUA-SHUANG KONG, JOHN ADAM EDMOND

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