Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires von Lari, L., Walther, T., Gass, M.H., Geelhaar, L., Chèze, C., Riechert, H., Bullough, T.J., Chalker, P.R.

Volltext

Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE von Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., Dimitrakopulos, G. P., Kehagias, Th, Komninou, Ph, Karakostas, Th, Chèze, C., Geelhaar, L., Riechert, H.

Volltext

The microstructural influence of nitrogen incorporation in dilute nitride semiconductors von Chalker, P R, Bullough, T J, Gass, M, Thomas, S, Joyce, T B

Volltext

Compositional variation in as-grown GaInNAs/GaAs quantum well structures von Chalker, P.R, Davock, H, Thomas, S, Joyce, T.B, Bullough, T.J, Potter, R.J, Balkan, N

Volltext

Di-Carbon Defects in Annealed Highly Carbon Doped GaAs von Wagner, J., Newman, R. C., Davidson, B. R., Westwater, S. P., Bullough, T. J., Joyce, T. B., Latham, C. D., Jones, R., Öberg, S.

Volltext

Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth von Lari, L., Murray, R.T., Bullough, T.J., Chalker, P.R., Gass, M., Chèze, C., Geelhaar, L., Riechert, H.

Volltext

Thermal stability of C-doped GaAs/AlAs DBR structures von Liang, M.S., Bullough, T.J., Joyce, T.B.

Volltext

Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit von Thomas, S, White, S, Chalker, P R, Bullough, T J, Joyce, T B

Volltext

Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE von Hill, D., Farrell, T., Bullough, T.J.

Volltext

GaN, AlGaN, HfO2 based radial heterostructure nanowires von Lari, L, Walther, T, Black, K, Murray, R T, Bullough, T J, Chalker, P R, Chèze, C, Geelhaar, L, Riechert, H

Volltext

The microstructure and thermal stability of CBE grown heavily carbon doped GaAs von Westwater, S.P., Bullough, T.J.

Volltext

Beam equivalent pressure measurements in chemical beam epitaxy von Joyce, T.B., Bullough, T.J.

Volltext

A calibration of the H-CAS stretch mode in GaAs von Davidson, B R, Newman, R C, Joyce, T B, Bullough, T J

Volltext

Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy von Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., Chalker, P. R.

Volltext

Sputtering and the formation of nanometre voids and holes in aluminium in a scanning transmission electron microscope von Bullough, T. J.

Volltext

A comparison of the transitory periods in GaAs and AlGaAs CBE growth von Hill, D, Farrell, T, Joyce, T.B, Bullough, T.J

Volltext

The structure and vibrational modes of H-CAs pairs in passivated AlAs grown by chemical beam epitaxy von Pritchard, R E, Davidson, B R, Newman, R C, Bullough, T J, Joyce, T B, Jones, R, Oberg, S

Volltext

Carbon acceptors passivated with hydrogen and the search for carbon donors in highly doped GaAs:C von Ashwin, M J, Davidson, B R, Woodhouse, K, Newman, R C, Bullough, T J, Joyce, T B, Nicklin, R, Bradley, R R

Volltext

CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS von JOYCE, TB, BULLOUGH, TJ, KIGHTLEY, P, KIELY, CJ, XING, YR, GOODHEW, PJ

Volltext

XeCl excimer laser assisted CBE growth of GaAs von Fareell, T., Armstrong, J.V., Joyce, T.B., Bullough, T.J., Kightley, P., Goodhew, P.J.

Volltext