SiC(0001)3 × 3-Si surface reconstruction — a new insight with a STM von Kulakov, M.A, Henn, G, Bullemer, B

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Multi-region uniform-field model of amorphous-silicon solar cells von Pfleiderer, H, Bullemer, B

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Scanning tunnelling microscopy study of Si(100)-c(4 × 4) structure formation by annealing of Si epitaxial films von Zhang, Z., Kulakov, M.A., Bullemer, B.

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Multi-region solar cell modeling von Pfleiderer, H., Bullemer, B.

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New features of C-type defects on the Si(100) surface observed by scanning tunnelling microscopy von Zhang, Z., Kulakov, M.A., Bullemer, B.

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Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopy von Zhang, Z., Kulakov, M. A., Bullemer, B., Eisele, I., Zotov, A. V.

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Normalized differential conductivity and surface density of states in simulated tunneling spectroscopy von Zhang, Z., Bullemer, B.

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Surface morphology and reconstructions of ultra thin Si films grown by solid-phase epitaxy von Zhang, Z, Kulakov, M.A, Bullemer, B

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Scanning tunnelling microscopy on the 6H SiC(0001) surface von Kulakov, M.A., Heuell, P., Tsvetkov, V.F., Bullemer, B.

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Structural defects of the Si(111)√3×√3-B surface studied by scanning tunneling microscopy von Zotov, A.V., Kulakov, M.A., Ryzhkov, S.V., Saranin, A.A., Lifshits, V.G., Bullemer, B., Eisele, I.

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Charge transfer and rest-atom imaging in dimer-adatom-stacking-fault structure evolution observed by scanning tunnelling microscopy on the Si(111) surface von Zhang, Z., Kulakov, M.A., Bullemer, B.

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Morphology and atomic structure of the [formula omitted] surface reconstruction von Hoster, H.E., Kulakov, M.A., Bullemer, B.

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Stepped morphology on 4H and 15R silicon carbide: modelling by a random walk von Heuell, P., Kulakov, M.A., Bullemer, B.

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An adaptive scan generator for a scanning tunneling microscope von Heuell, P., Kulakov, M. A., Bullemer, B.

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An ultra-high resolution control unit for a scanning tunnelling microscope von Heuell, P., Cuzdi, S., Kulakov, M.A., Bullemer, B.

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Scanning tunnelling microscopy on quenched Si(111) surfaces von Teufel, L., Heuell, P., Kulakov, M.A., Bullemer, B.

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Morphology and atomic structure of SiC(0001) surfaces: a UHV STM study von Kulakov, M.A., Hoster, H., Henn, G., Bullemer, B.

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Modelling of pattern growth by vacancy diffusion and trapping on Si(111)7 × 7 surface von Kulakov, M.A., Werdin, St, Heuell, P., Bullemer, B.

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Delta-doped MESFET with MBE-grown Si von ZEINDL, H. P, BULLEMER, B, EISELE, I, TEMPEL, G

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Equivalence of electrons and holes in a-Si p-s-n diodes von KUSIAN, W, PFLEIDERER, H, BULLEMER, B

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