Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants von Bukhori, M.F., Roy, S., Asenov, A.

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Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants von Bukhori, Muhammad Faiz, Roy, Scott, Asenov, Asen

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Impact of Individual Charged Gate-Oxide Defects on the Entire I- V Characteristic of Nanoscaled FETs von Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, P. J., Grasser, T., Asenov, A., Groeseneken, G.

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Transfer Learning-based Weed Classification and Detection for Precision Agriculture von Pauzi, Nurul Ayni Mat, Mustaza, Seri Mastura, Zainal, Nasharuddin, Bukhori, Muhammad Faiz

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Impact of Individual Charged Gate-Oxide Defects on the Entire I D - V G Characteristic of Nanoscaled FETs von Franco, Jacopo, Kaczer, Ben, Toledano-Luque, Maria, Bukhori, Muhammad Faiz, Roussel, Philippe J, Grasser, Tibor, Asenov, Asen, Groeseneken, Guido

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Impact of Individual Charged Gate-Oxide Defects on the Entire [Formula Omitted]-[Formula Omitted] Characteristic of Nanoscaled FETs von Franco, Jacopo, Kaczer, Ben, Toledano-Luque, María, Bukhori, Muhammad Faiz, Roussel, Philippe J, Grasser, Tibor, Asenov, Asen, Groeseneken, Guido

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Impact of Individual Charged Gate-Oxide Defects on the Entire ID-VG Characteristic of Nanoscaled FETs von FRANCO, Jacopo, KACZER, Ben, TOLEDANO-LUQUE, Maria, FAIZ BUKHORI, Muhammad, ROUSSEL, Philippe J, GRASSER, Tibor, ASENOV, Asen, GROESENEKEN, Guido

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'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions von Bukhori, Muhammad Faiz, Grasser, Tibor, Kaczer, Ben, Reisinger, Hans, Asenov, Asen

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Simulation of statistical aspects of reliability in nano CMOS transistors von Bukhori, M.F., Brown, A.R., Roy, S., Asenov, A.

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Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models von Bukhori, Muhammad Faiz, Kamsani, Noor Ain, Asenov, Asen, Nayan, Nazrul Anuar

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Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants von Bukhori, M.F., Roy, S., Asenov, A.

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OXADM: Feasibility of network security and migration von Ab-Rahman, M.S., Ibrahim, W., Bukhori, M.F., Shaari, S.

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