Monte Carlo Comparison of n-Type and p-Type Nanosheets With FinFETs: Effect of the Number of Sheets von Bufler, F. M., Jang, D., Hellings, G., Eneman, G., Matagne, P., Spessot, A., Na, M. H.

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Monte Carlo Analysis of -Type SiGe-Channel Nanosheet Performance von Bufler, F. M., Arimura, H., Favia, P., Eneman, G., Matagne, P., Horiguchi, N., Hellings, G.

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Monte Carlo Stress Engineering of Scaled (110) and (100) Bulk pMOSFETs von Bufler, F.M., Gautschi, R., Erlebach, A.

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Performance Comparison of –Type Si Nanowires, Nanosheets, and FinFETs by MC Device Simulation von Bufler, F. M., Ritzenthaler, R., Mertens, H., Eneman, G., Mocuta, A., Horiguchi, N.

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Efficient Monte Carlo device modeling von Bufler, F.M., Schenk, A., Fichtner, W.

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Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects von Bufler, F.M., Fichtner, W.

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3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability von Vandooren, A., Franco, J., Parvais, B., Wu, Z., Witters, L., Walke, A., Li, W., Peng, L., Deshpande, V., Bufler, F. M., Rassoul, N., Hellings, G., Jamieson, G., Inoue, F., Verbinnen, G., Devriendt, K., Teugels, L., Heylen, N., Vecchio, E., Zheng, T., Rosseel, E., Vanherle, W., Hikavyy, A., Chan, B. T., Ritzenthaler, R., Besnard, G., Schwarzenbach, W., Gaudin, G., Radu, I., Nguyen, B.-Y., Waldron, N., De Heyn, V., Mocuta, D., Collaert, N.

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3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction von Bufler, F. M., Smith, L.

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Monte Carlo simulation and measurement of nanoscale n-MOSFETs von Bufler, F.M., Asahi, Y., Yoshimura, H., Zechner, C., Schenk, A., Fichtner, W.

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Scaling and strain dependence of nanoscale strained-Si p-MOSFET performance von Bufler, F.M., Fichtner, W.

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Hole transport in strained Si1−xGex alloys on Si1−yGey substrates von Bufler, F. M., Meinerzhagen, B.

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Hole and electron transport in strained Si: Orthorhombic versus biaxial tensile strain von Bufler, F. M., Fichtner, W.

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Strained-Si single-gate versus unstrained-Si double-gate MOSFETs von Bufler, F M, Schenk, A, Fichtner, W

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Scaling of Bulk pMOSFETs: (110) Surface Orientation Versus Uniaxial Compressive Stress von Bufler, F.M., Tsibizov, A., Erlebach, A.

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Monte Carlo Analysis of p-Type Si \text Ge \text -Channel Nanosheet Performance von Bufler, F. M., Arimura, H., Favia, P., Eneman, G., Matagne, P., Horiguchi, N., Hellings, G.

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Decomposition of the Coulomb interaction into self-consistent fields and local scattering terms von Bufler, F M

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Threshold energy and impact ionization scattering rate calculations for strained silicon von May, C., Bufler, F. M.

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Symmetry reduction by surface scattering and mobility model for stressed 〈100〉/(001) MOSFETs von Bufler, F M, Erlebach, A, Oulmane, M

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Two-band density matrix theory: the effect of external fields on transition and transport processes von Bufler, F M, Schlosser, J

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On a simple and accurate quantum correction for Monte Carlo simulation von Bufler, F. M., Hudé, R., Erlebach, A.

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