GaAs radiation imaging detectors with an active layer thickness up to 1 mm von Tyazhev, A.V, Budnitsky, D.L, Koretskay, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Vorobiev, A.P

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GaAs resistor structures for X-ray imaging detectors von Ayzenshtat, G.I, Budnitsky, D.L, Koretskaya, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Tyazhev, A.V, Vorobiev, A.P

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GaAs detector material made from 3-inch wafers von Ayzenshtat, G.I., Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Mokeev, D.Y., Okaevich, L.S., Tolbanov, O.P., Tyazhev, A.V.

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GaAs radiation imaging detectors with an active layer thickness up to 1mm von Tyazhev, A.V, Budnitsky, D.L, Koretskay, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Vorobiev, A.P

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GaAs as a material for particle detectors von Ayzenshtat, A.I., Budnitsky, D.L., Koretskaya, O.B., Okaevich, L.S., Novikov, V.A., Potapov, A.I., Tolbanov, O.P., Tyazhev, A.V., Vorobiev, A.P.

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GaAs structures for X-ray imaging detectors von Ayzenshtat, G.I., Bakin, N.N., Budnitsky, D.L., Drugova, E.P., Germogenov, V.P., Khludkov, S.S., Koretskaya, O.B., Okaevich, L.S., Porokhovnichenko, L.P., Potapov, A.I., Smith, K.M., Tolbanov, O.P., Tyazhev, A.V., Vilisova, M.D., Vorobiev, A.P.

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Epitaxial structures based on compensated GaAs for γ- and X-ray detectors von Budnitsky, D.L., Germogenov, V.P., Guschin, S.M., Larionov, A.A., Porokhovnichenko, L.P., Potapov, A.I., Tolbanov, O.P., Vorobiev, A.P.

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Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors von Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Tolbanov, O.P.

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Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr von Budnitsky, D.L., Lychagin, A.D., Okaevich, L.S., Tolbanov, O.P.

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