Characterization of 4 inch GaAs:Cr wafers von Budnitsky, D., Novikov, V., Lozinskaya, A., Kolesnikova, I., Zarubin, A., Shemeryankina, A., Mikhailov, T., Skakunov, M., Tolbanov, O., Tyazhev, A.

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Chromium-compensated GaAs detector material and sensors von Budnitsky, D, Tyazhev, A, Novikov, V, Zarubin, A, Tolbanov, O, Skakunov, M, Hamann, E, Fauler, A, Fiederle, M, Procz, S, Graafsma, H, Ryabkov, S

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GaAs radiation imaging detectors with an active layer thickness up to 1 mm von Tyazhev, A.V, Budnitsky, D.L, Koretskay, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Vorobiev, A.P

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GaAs resistor structures for X-ray imaging detectors von Ayzenshtat, G.I, Budnitsky, D.L, Koretskaya, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Tyazhev, A.V, Vorobiev, A.P

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GaAs detector material made from 3-inch wafers von Ayzenshtat, G.I., Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Mokeev, D.Y., Okaevich, L.S., Tolbanov, O.P., Tyazhev, A.V.

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GaAs as a material for particle detectors von Ayzenshtat, A.I., Budnitsky, D.L., Koretskaya, O.B., Okaevich, L.S., Novikov, V.A., Potapov, A.I., Tolbanov, O.P., Tyazhev, A.V., Vorobiev, A.P.

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GaAs structures for X-ray imaging detectors von Ayzenshtat, G.I., Bakin, N.N., Budnitsky, D.L., Drugova, E.P., Germogenov, V.P., Khludkov, S.S., Koretskaya, O.B., Okaevich, L.S., Porokhovnichenko, L.P., Potapov, A.I., Smith, K.M., Tolbanov, O.P., Tyazhev, A.V., Vilisova, M.D., Vorobiev, A.P.

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Epitaxial structures based on compensated GaAs for γ- and X-ray detectors von Budnitsky, D.L., Germogenov, V.P., Guschin, S.M., Larionov, A.A., Porokhovnichenko, L.P., Potapov, A.I., Tolbanov, O.P., Vorobiev, A.P.

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Geochemistry of obsidian from Krasnoe Lake on the Chukchi Peninsula (Northeastern Siberia) von Popov, V. K., Grebennikov, A. V., Kuzmin, Ya. V., Glascock, M. D., Nozdrachev, E. A., Budnitsky, S. Yu, Vorobey, I. E.

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