Electrical Properties OF GaAs Doped with Iron von Khludkov, S. S., Prudaev, I. A., Novikov, V. A., Budnitskii, D. L., Lopatetskaya, K. S.

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Evaluation of chromium concentration in high-resistive GaAs:Cr produced by diffusion von Budnitskii, D. L., Novikov, V. A., Tolbanov, O. P., Yaskevich, T. M.

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A photovoltaic effect in the metal–high-resistive GaAs:Cr contact von Budnitskii, D. L., Novikov, V. A., Prudaev, I. A., Тоlbanov, О. P., Yaskevich, Т. М.

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Photoelectrical characteristics of as-grown high-resistance GaAs single crystals von Budnitskii, D.L, Koretskaya, O.B, Tolbanov, O.P, Tyazhev, A.V

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Photoelectrical characteristics of as-grown highresistance GaAs single crystals von Budnitskii, D. L., Koretskaya, O. B., Тоlbanov, О. P., Tyazhev, А. V.

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Charge-carrier lifetimes in high-resistance GaAs doped by chromium diffusion von Budnitskii, D. L., Novikov, V. A., Tolbanov, O. P., Prudaev, I. A.

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Gamma-ray detectors based on GaAs for nanostructural investigations von Ayzenshtat, G. I., Budnitskii, D. L., Mokeev, D. Yu, Novikov, V. A., Syresin, E. M., Tolbanov, O. P., Tyazhev, A. V., Shelkov, G. A.

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p-n-type conversion and optical properties of 2.0 MeV electron-irradiated ZnSnAs2 von Brudnyi, V. N., Budnitskii, D. L., Krivov, M. A., Melev, V. G.

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Gallium arsenide structures with deep centers and ionized radiation detectors based on them von Khludkov, S. S., Tolbanov, O. P., Budnitskii, D. L.

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Conductivity of high-resistance π layers and parameters of iron-doped GaAs diode structures von Budnitskii, D. L., Gossen, A. I., Koretskaya, O. B., Khludkov, S. S.

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The electrical and optical properties of 2.0 MeV electron-irradiated ZnGeP2 von Brudnyi, V. N., Budnitskii, D. L., Krivov, M. A., Masagutova, R. V., Prochukhan, V. D., Rud, Yu. V.

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The Infrared Attenuation in α-Particle Irradiated Gallium Arsenide von Brudnyi, V. N., Budnitskii, D. L., Krivov, M. A., Redko, V. P.

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Gallium arsenide structures sensitive to ultraviolet radiation von Budnitskii, D. L., Koretskaya, O. B., Koretskii, A. V., Tolbanov, O. P., Khludkov, S. S.

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Thermal stability of optical properties of electron-irradiated GaAs von Budnitskii, D. L., Krivov, M. A.

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Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide von Brudnyi, V. N., Budnitskii, D. L., Kolin, N. G., Malisova, E. V., Nikiforova, M. P.

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Effect of electron irradiation on the properties of germanium-doped gallium arsenide von Brudnyi, V. N., Budnitskii, D. L., Kolin, N. G., Malisova, E. V., Nikiforova, M. P.

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Photoionization cross sections of E levels in electron-irradiated n-type GaAs von Budnitskii, D. L., Krivov, M. A., Popova, E. A.

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Nature of absorption in electron-irradiated n-GaAs von Brudnyi, V. N., Budnitskii, D. L., Krivov, M. A.

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Long-wave optical absorption in electron-bombarded GaAs von Brudnyi, V. N., Budnitskii, D. L., Krivov, M. A., Popova, E. A.

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Infra-Red Attenuation in Alpha-Particle Irradiated GaAs von Brudnyi, V N, Budnitskii, D L, Krivov, M A, Redko, V P

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