Low-power pulsed-laser annealing of implanted GaAs von VITALI, G, ROSSI, M, KARPUZOV, D, BUDINOV, H, KALIZOVA, M

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Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs von ROSSI, M, VITALI, G, KARPUZOV, D, KALITZOVA, M, BUDINOV, H

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RHEED and RBS analysis of low-power laser annealed GaAs von Vitali, G., Rossi, M., Karpuzov, D., Budinov, H., Kalitzova, M., Katardjiev, I.

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Computer simulated and channelling studies of damage distributions in phosphorus implanted silicon von Budinov, H, Karpuzov, DS

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High dose arsenic implantation of silicon von Budinov, H.I., Karpuzov, D.S.

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Defect depth profiles in B + and As + implanted Si von Budinov, H.I., Karpuzov, D.S.

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Sputtering effects in high dose Bi + implantation of GaAs von Budinov, H.I., Karpuzov, D.S.

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Flash Lamp Annealing of Phosphorus-Implanted Silicon von Budinov, H., Stavrov, V., Burkova, R.

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Flash Lamp Annealing of Phosphorus-Implanted Silicon von Budinov, H., Stavrov, V., Burkova, R.

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