Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition von Luxmoore, I.J., Ross, I.M., Cullis, A.G., Fry, P.W., Orr, J., Buckle, P.D., Jefferson, J.H.

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An inter-subband device with terahertz applications von Buckle, P.D., Dawson, P., Lynch, M.A., Chun-Yi Kuo, Missous, M., Truscott, W.S.

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The cyclotron resonance in Heterostructures with the InSb/AlInSb quantum wells von Vasilyev, Yu. B., Gouider, F., Nachtwei, G., Buckle, P. D.

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Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition von ANDROULAKIS, J, GARDELIS, S, GIAPINTZAKIS, J, BUCKLE, P. D

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Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices von Harrison, P.A., Eaves, L., Martin, P.M., Henini, M., Buckle, P.D., Skolnick, M.S., Whittaker, D.M., Hill, G.

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27aYG-9 量子ドット結合GaAs/(AlGa)As FETデバイスにおける輸送現象測定II(化合物・輸送・アモルファス・不純物)(領域4) von 竹端, 寛治, 高増, 正

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Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells von McIndo, C.J, Hayes, D.G, Papageorgiou, A, Hanks, L.A, Smith, G.V, Allford, C.P, Zhang, S, Clarke, E.M, Buckle, P.D

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Electron transport lifetimes in InSb/Al1-xInxSb quantum well 2DEGs von Hayes, D.G, Allford, C.P, Smith, G.V, McIndo, C, Hanks, L.A, Gilbertson, A.M, Cohen, L.F, Zhang, S, Clarke, E.M, Buckle, P.D

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Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy von McIndo, C.J, Hayes, D.G, Papageorgiou, A, Hanks, L.A, Smith, G.V, Allford, C.P, Zhang, S, Clarke, E.M, Buckle, P.D

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Optical properties of single charge tuneable InGaAs quantum dots von Ashmore, A.D, Finley, J.J, Oulton, R, Fry, P.W, Lemaı̂tre, A, Mowbray, D.J, Skolnick, M.S, Hopkinson, M, Buckle, P.D, Maksym, P.A

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Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors von Sherliker, B., Halsall, M.P., Harrison, P., Jovanović, V.D., Indjin, D., Ikonić, Z., Parbrook, P.J., Whitehead, M.A., Wang, T., Buckle, P.D., Phillips, J., Carder, D.

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Full wafer optical characterisation of resonant tunnelling structures using photoluminescence excitation spectroscopy von Buckle, P.D., Dawson, P., Missous, M., Truscott, W.S.

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High density, spatially separated electron/hole plasmas in mixed type I-type II GaAs/AlAs heterostructures von Buckle, P.D., Dawson, P.

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An electrical and optical study of electrons in triple barrier structures von Kuo, C.-Y., Lynch, M.A., Roberts, A.H., Buckle, P.D., Dawson, P., Missous, M., Truscott, W.S.

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27aYG-9 Transport measurements on GaAs/(AlGa)As FET incorporating quantum dots II von Takehana, Kanji, Takamasu, Tadashi, Hill, R.J.A., Levin, A., Henini, M., Eaves, L., Buckle, P.D., Jefferson, J.H.

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Optical spectroscopy of inverted electron populations in double-barrier resonant-tunnelling structures von Cockburn, J.W., Teissier, R.J., Skolnick, M.S., Buckle, P.D., Whittaker, D.M., Willcox, A.R.K., Smith, G.W., Hill, G., Pate, M.A.

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Luminescence studies of resonant tunneling in a triple barrier structure with strongly coupled quantum wells von Turner, T.S., Martin, P.M., Eaves, L., Evans, H.B., Harrison, P.A., Henini, M., Hughes, O.H., Whittaker, D.M., Buckle, P.D., Fisher, T.A., Skolnick, M.S., Hill, G.

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An inter-subband device with THz applications von Buckle, P.D., Dawson, P., Lynch, M.A., Chun-Yi Kuo, Missous, M., Truscott, W.S.

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A tested design tool for multi-barrier resonant tunnelling devices with high frequency applications von Lynch, M., Buckle, P.D., Kuo, C.-Y., Truscott, W.S.

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Magneto-optical studies of ballistic electron transport in single barrier heterostructures von Teissier, R., Cockburn, J.W., Finley, J.J., Skolnick, M.S., Buckle, P.D., Mowbray, D.J., Grey, R., Hill, G., Pate, M.A.

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