Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence von Sham, T. K, Jiang, D. T, Coulthard, I, Lorimer, J. W, Feng, X. H, Tan, K. H, Frigo, S. P, Rosenberg, R. A, Houghton, D. C, Bryskiewicz, B

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Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure von Dixon-Warren, St. J., Lu, R. P., Ingrey, S., Macquistan, D., Bryskiewicz, T., Smith, G., Bryskiewicz, B.

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Optical absorption evidence for quantum confinement effects in porous silicon von Lockwood, D.J., Wang, A., Bryskiewicz, B.

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Origin of carbon and its influence on photoluminescence in porous silicon von Siegele, R., Haugen, H.K., Lockwood, D.J., Bryskiewicz, B., Forster, J.S., Andrews, H.R.

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Internal strain and dislocations in Ga1−xAs crystals grown by liquid phase epitaxy/electroepitaxy von Bryskiewicz, B., Bryskiewicz, T., Jiran, E.

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Optical Luminescence Yield X-ray Absorption Fine Structures at the Sulphur and Silicon K-edge von Sham, T. K., Feng, X.-H., Jiang, D.-T., Tan, K. H., Frigo, S. P., Rosenberg, R. A., Houghton, D. C., Bryskiewicz, B.

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Internal strain and dislocations in InxGa1-xAs crystals grown by liquid phase epitaxy/electroepitaxy von BRYSKIEWICZ, B, BRYSKIEWICZ, T, JIRAN, E

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Transmission electron microscopy characterization of In x Ga1− x As substrates grown by heteroepitaxial lateral overgrowth von McCaffrey, J. P., Bryskiewicz, B., Bryskiewicz, T., Jiran, E.

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SR sheds light on origin of luminescence from porous silicon von Sham, T. K., Jiang, D. T., Coulthard, I., Lorimer, J. W., Feng, X. H., Tan, K. H., Frigo, S. P., Rosenberg, R. A., Houghton, D. C., Bryskiewicz, B.

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Plasma-first resuscitation to treat haemorrhagic shock during emergency ground transportation in an urban area: a randomised trial von Moore, Hunter B, Moore, Ernest E, Chapman, Michael P, McVaney, Kevin, Bryskiewicz, Gary, Blechar, Robert, Chin, Theresa, Burlew, Clay Cothren, Pieracci, Fredric, West, F Bernadette, Fleming, Courtney D, Ghasabyan, Arsen, Chandler, James, Silliman, Christopher C, Banerjee, Anirban, Sauaia, Angela

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Cellular structure in LEC ternary Ga1 − xInxAs crystals von Reid, D., Lent, B., Bryskiewicz, T., Singer, P., Mortimer, E., Bonner, W.A.

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Cellular structure in LEC ternary Ga 1 − xIn xAs crystals von Reid, D., Lent, B., Bryskiewicz, T., Singer, P., Mortimer, E., Bonner, W.A.

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Cellular structure in LEC ternary Ga1-xInxAs crystals : American crystal growth 1996 von REID, D, LENT, B, BRYSKIEWICZ, T, SINGER, P, MORTIMER, E, BONNER, W. A

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Ta2O5 antireflection coatings for near-IR GaAs0•80Sb0•20 photodiodes von RADOJEWSKA, E. B, BRYSKIEWICZ, T, JEDRAL, L. Z, RADOJEWSKI, J. M

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Reflectivity Spectra of Epitaxial GaAs-Rich GaAs sub 1--x Sb sub x von Radojewska, E B, Bryskiewicz, T, Jedral, L, Brzezinski, J, Lewandowski, W

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Reflectivity spectra of epitaxial GaAs-rich GaAs1-xSbx von RADOJEWSKA, E. B, BRYSKIEWICZ, T, JEDRAL, L, BRZEZINSKI, J, LEWANDOWSKI, W

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Ta2O5 antireflection coatings for near-IR GaAs0.80Sb0.20 photodiodes von Radojewska, E.Beata, Bryśkiewicz, Tadeusz, Jȩdral, Lech Z., Radojewski, Jacek M.

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