Further optimization of VLS localized epitaxy for deeper 4H‐SiC p–n junctions von Sejil, S., Lazar, M., Carole, D., Brylinski, C., Planson, D., Ferro, G., Raynaud, C.

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Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers von Defives, D., Noblanc, O., Dua, C., Brylinski, C., Barthula, M., Aubry-Fortuna, V., Meyer, F.

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Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport von Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Thierry-Jebali, N., Brosselard, P., Planson, D., Brylinski, C., Ferro, G.

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Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase von Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Planson, D., Brylinski, C., Ferro, G.

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Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity von Sghaier, N., Bluet, J.-M., Souifi, A., Guillot, G., Morvan, E., Brylinski, C.

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Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers von Cayrel, Frédéric, Thierry-Jebali, Nicolas, Ménard, Olivier, Brylinski, Christian, Alquier, Daniel

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Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3) von Amy, F, Enriquez, H, Soukiassian, P, Storino, P F, Chabal, Y J, Mayne, A J, Dujardin, G, Hwu, Y K, Brylinski, C

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Atomic Scale Oxidation of a Complex System: O 2 / α -SiC(0001)-( 3 × 3 ) von Amy, F., Enriquez, H., Soukiassian, P., Storino, P.-F., Chabal, Y. J., Mayne, A. J., Dujardin, G., Hwu, Y. K., Brylinski, C.

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Long-term reliability of Ti–Pt–Au metallization system for Schottky contact and first-level metallization on SiC MESFET von Sozza, A, Dua, C, Kerlain, A, Brylinski, C, Zanoni, E

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Self-heating effects in silicon carbide MESFETs von Royet, A.S., Ouisse, T., Cabon, B., Noblanc, O., Arnodo, C., Brylinski, C.

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Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions: Further optimization of VLS localized epitaxy von Sejil, S., Lazar, M., Carole, D., Brylinski, C., Planson, D., Ferro, G., Raynaud, C.

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Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer von Arnodo, C., Dua, Christian, Noblanc, Olivier, Chartier, E., Brylinski, Christian

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Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs von Noblanc, O, Arnodo, C, Dua, C, Chartier, E, Brylinski, C

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Characterization of ohmic and Schottky contacts on SiC von Kakanakova-Georgieva, A., Marinova, Ts, Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C.

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Nickel based ohmic contacts on SiC von Marinova, Ts, Kakanakova-Georgieva, A., Krastev, V., Kakanakov, R., Neshev, M., Kassamakova, L., Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C., Pecz, B., Radnoczi, G., Vincze, Gy

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It’s a Long Way to “Superhard” Semiconductors von Brylinski, Christian

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Identification of the 6H-SiC(0001) 3 × 3 surface reconstruction core-level shifted components von AMY, F, SOUKIASSIAN, P, HWU, Y. K, BRYLINSKI, C

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Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power von Villard, F., Prigent, J.-P., Morvan, E., Dua, C., Brylinski, C., Temcamani, F., Pouvil, P.

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Very high sustainable forward current densities on 4H-SiC p-n junctions formed by VLS localized epitaxy of heavily Al-doped p++ emitters von Sejil, S., Lalouat, L., Lazar, M., Carole, D., Brylinski, C., Jomard, F., Planson, D., Ferro, G., Raynaud, C.

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Cracovie : notes de voyage, mai 188... / par Théodore Brylinski ; publié par Mathieu Brylinski von Brylinski, Théodore. Auteur du texte

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