Conjugated Polymer Synthesis via Catalyst-Transfer Polycondensation (CTP): Mechanism, Scope, and Applications von Bryan, Zachary J, McNeil, Anne J

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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates von Bryan, Zachary, Bryan, Isaac, Xie, Jinqiao, Mita, Seiji, Sitar, Zlatko, Collazo, Ramón

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Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides von Bryan, Isaac, Bryan, Zachary, Mita, Seiji, Rice, Anthony, Tweedie, James, Collazo, Ramón, Sitar, Zlatko

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Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD von Bryan, Isaac, Bryan, Zachary, Washiyama, Shun, Reddy, Pramod, Gaddy, Benjamin, Sarkar, Biplab, Breckenridge, M. Hayden, Guo, Qiang, Bobea, Milena, Tweedie, James, Mita, Seiji, Irving, Douglas, Collazo, Ramon, Sitar, Zlatko

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On compensation in Si-doped AlN von Harris, Joshua S., Baker, Jonathon N., Gaddy, Benjamin E., Bryan, Isaac, Bryan, Zachary, Mirrielees, Kelsey J., Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko, Irving, Douglas L.

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The role of surface kinetics on composition and quality of AlGaN von Bryan, Isaac, Bryan, Zachary, Mita, Seiji, Rice, Anthony, Hussey, Lindsay, Shelton, Christopher, Tweedie, James, Maria, Jon-Paul, Collazo, Ramón, Sitar, Zlatko

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The effect of polarity and surface states on the Fermi level at III-nitride surfaces von Reddy, Pramod, Bryan, Isaac, Bryan, Zachary, Guo, Wei, Hussey, Lindsay, Collazo, Ramon, Sitar, Zlatko

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Chain-Growth Polymerization of Aryl Grignards Initiated by a Stabilized NHC-Pd Precatalyst von Bryan, Zachary J., Smith, Mitchell L., McNeil, Anne J.

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Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates von Bryan, Zachary, Bryan, Isaac, Mita, Seiji, Tweedie, James, Sitar, Zlatko, Collazo, Ramón

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Charge neutrality levels, barrier heights, and band offsets at polar AlGaN von Reddy, Pramod, Bryan, Isaac, Bryan, Zachary, Tweedie, James, Washiyama, Shun, Kirste, Ronny, Mita, Seiji, Collazo, Ramon, Sitar, Zlatko

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Electronic Biosensors Based on III-Nitride Semiconductors von Kirste, Ronny, Rohrbaugh, Nathaniel, Bryan, Isaac, Bryan, Zachary, Collazo, Ramon, Ivanisevic, Albena

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On the origin of the 265 nm absorption band in AlN bulk crystals von Collazo, Ramón, Xie, Jinqiao, Gaddy, Benjamin E., Bryan, Zachary, Kirste, Ronny, Hoffmann, Marc, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Irving, Douglas L., Sitar, Zlatko

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Effect of Solvent on Surface Ordering of Poly(3-hexylthiophene) Thin Films von Xiao, Minyu, Zhang, Xiaoxian, Bryan, Zachary J, Jasensky, Joshua, McNeil, Anne J, Chen, Zhan

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Evidence for a preferential intramolecular oxidative addition in Ni-catalyzed cross-coupling reactions and their impact on chain-growth polymerizations von Bryan, Zachary J, McNeil, Anne J

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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures von Xie, Jinqiao, Mita, Seiji, Bryan, Zachary, Guo, Wei, Hussey, Lindsay, Moody, Baxter, Schlesser, Raoul, Kirste, Ronny, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN von Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Kirste, Ronny, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Sitar, Zlatko, Collazo, Ramón, Irving, Douglas L.

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High free carrier concentration in p-GaN grown on AlN substrates von Sarkar, Biplab, Mita, Seiji, Reddy, Pramod, Klump, Andrew, Kaess, Felix, Tweedie, James, Bryan, Isaac, Bryan, Zachary, Kirste, Ronny, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko

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Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates von Guo, Wei, Bryan, Zachary, Xie, Jinqiao, Kirste, Ronny, Mita, Seiji, Bryan, Isaac, Hussey, Lindsay, Bobea, Milena, Haidet, Brian, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

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Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN von Bryan, Zachary, Bryan, Isaac, Gaddy, Benjamin E., Reddy, Pramod, Hussey, Lindsay, Bobea, Milena, Guo, Wei, Hoffmann, Marc, Kirste, Ronny, Tweedie, James, Gerhold, Michael, Irving, Douglas L., Sitar, Zlatko, Collazo, Ramón

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN von Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Kirste, Ronny, Sitar, Zlatko, Collazo, Ramón, Irving, Douglas L.

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