High-Performance Deep Submicron Ge pMOSFETs With Halo Implants von Nicholas, G., De Jaeger, B., Brunco, D.P., Zimmerman, P., Eneman, G., Martens, K., Meuris, M., Heyns, M.M.

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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions von Eneman, G., Wiot, M., Brugere, A., Casain, O.S.I., Sonde, S., Brunco, D.P., De Jaeger, B., Satta, A., Hellings, G., De Meyer, K., Claeys, C., Meuris, M., Heyns, M.M., Simoen, E.

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Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations von Eneman, Geert, Roussel, Philippe, Brunco, David Paul, Collaert, Nadine, Mocuta, Anda, Thean, Aaron

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High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants von Hellings, G., Mitard, J., Eneman, G., De Jaeger, B., Brunco, D.P., Shamiryan, D., Vandeweyer, T., Meuris, M., Heyns, M.M., De Meyer, K.

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Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology von Eneman, G., De Jaeger, B., Simoen, E., Brunco, D.P., Hellings, G., Mitard, J., De Meyer, K., Meuris, M., Heyns, M.M.

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Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition von Delabie, Annelies, Caymax, Matty, Brijs, Bert, Brunco, David P., Conard, Thierry, Sleeckx, Erik, Van Elshocht, Sven, Ragnarsson, Lars-Åke, De Gendt, Stefan, Heyns, Marc M.

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Germanium MOSFETs with CeO2/HfO2/TiN gate stacks von NICHOLAS, Gareth, BRUNCO, David P, DIMOULAS, A, VAN STEENBERGEN, Jan, BELLENGER, Florence, HOUSSA, Michel, CAYMAX, Matty, MEURIS, Marc, PANAYIOTATOS, Y, SOTIROPOULOS, Andreas

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs von Maji, D., Crupi, F., Amat, E., Simoen, E., De Jaeger, B., Brunco, D.P., Manoj, C.R., Rao, V.R., Magnone, P., Giusi, G., Pace, C., Pantisano, L., Mitard, J., Rodriguez, R., Nafria, M.

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Electrical characteristics of 8-Å EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions von RAGNARSSON, Lars-Ake, SEVEN, Simone, KAUSHIK, Vidya S, DE GENDT, Stefan, TSAI, Wilman, GROESENEKEN, Guido, DE MEYER, Kristin, HEYNS, Marc, TROJMAN, Lionel, JOHNSON, Kevin D, BRUNCO, David P, AOULAICHE, Marc, HOUSSA, Michel, KAUERAUF, Thomas, DEGRAEVE, Robin, DELABIE, Annelies

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Distribution and generation of traps in SiO2/Al2O3 gate stacks von CRUPI, Isodiana, DEGRAEVE, Robin, GOVOREANU, Bogdan, BRUNCO, David P, ROUSSEL, Philippe, VAN HOUDT, Jan

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The Importance of Moisture Control for EOT Scaling of Hf-Based Dielectrics von Ragnarsson, Lars-Åke, Brunco, David P., Yamamoto, Kazuhiko, Tökei, Zsolt, Pourtois, Geoffrey, Delabie, Annelies, Parmentier, Brigitte, Conard, Thierry, Roussel, Philippe, De Gendt, Stefan, Heyns, Marc M.

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Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing von Meuris, Marc, Van Steenbergen, Jan, Uwamahoro, Olivier, Vrancken, Evi, Sioncke, Sonja, Brunco, David P., Heyns, Marc

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Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique von CRUPI, Isodiana, DEGRAEVE, Robin, GOVOREANU, Bogdan, BRUNCO, David P, ROUSSEL, Philippe, VAN HOUDT, Jan

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Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation von Delabie, Annelies, Brunco, David P., Conard, Thierry, Favia, Paola, Bender, Hugo, Franquet, Alexis, Sioncke, Sonja, Vandervorst, Wilfried, Van Elshocht, Sven, Heyns, Marc, Meuris, Marc, Kim, Eunji, McIntyre, Paul C., Saraswat, Krishna C., LeBeau, James M., Cagnon, Joël, Stemmer, Susanne, Tsai, Wilman

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Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels von Delabie, Annelies, Alian, A., Bellenger, Florence, Brammertz, Guy, Brunco, David P., Caymax, Matty, Conard, Thierry, Franquet, A., Houssa, Michel, Sioncke, Sonja, Van Elshocht, S., Van Hemmen, J. L., Keuning, W., Kessels, W. M., Avanasiev, Valery, Stesmans, Andre, Heyns, Marc M., Meuris, Marc

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Etch Rates of Ge, GaAs and InGaAs in Acids, Bases and Peroxide Based Mixtures von Sioncke, Sonja, Brunco, David P., Meuris, Marc, Uwamahoro, Olivier, Van Steenbergen, Jan, Vrancken, Evi, Heyns, Marc M.

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Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual Substrates von Wang, Gang, Leys, Frederik E., Souriau, Laurent, Loo, Roger, Caymax, Matty, Brunco, David P., Geypen, Jef, Bender, Hugo, Meuris, Marc, Vandervorst, Wilfried, Heyns, Marc M.

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(Invited) Stress Simulations of Si- and Ge-Channel FinFETs for the 14 nm-Node and Beyond von Eneman, Geert, Brunco, David P., Witters, Liesbeth, Vincent, Benjamin, Favia, Paola, Hikavyy, Andriy, De Keersgieter, An, Mitard, Jerome, Loo, Roger, Veloso, Anabela, Richard, Olivier, Bender, Hugo, Vandervorst, Wilfried, Caymax, Matty, Horiguchi, Naoto, Collaert, Nadine, Thean, Aaron

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Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates? von Simoen, Eddy, Brouwers, Gijs, Yang, Rui, Eneman, Geert, Gonzalez, Mireia Bargallo, Leys, Frederick, De Jaeger, Brice, Mitard, Jerome, Brunco, David, Souriau, Laurent, Cody, Nyles, Thomas, Shawn, Lajaunie, Luc, David, Marie-Laure, Meuris, Marc

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Germanium: The Past and Possibly a Future Material for Microelectronics von Brunco, David P., De Jaeger, Brice, Eneman, Geert, Satta, Alessandra, Terzieva, Valentina, Souriau, Laurent, Leys, Frederik E., Pourtois, Geoffrey, Houssa, Michel, Opsomer, Karl, Nicholas, Gareth, Meuris, Marc, Heyns, Marc

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