Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates von Terzieva, V., Souriau, L., Caymax, M., Brunco, D.P., Moussa, A., Van Elshocht, S., Loo, R., Clemente, F., Satta, A., Meuris, Marc

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Scaling down the interpoly dielectric for next generation Flash memory: Challenges and opportunities von Govoreanu, B., Brunco, D.P., Van Houdt, J.

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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance von Brunco, D. P., De Jaeger, B., Eneman, G., Mitard, J., Hellings, G., Satta, A., Terzieva, V., Souriau, L., Leys, F. E., Pourtois, G., Houssa, M., Winderickx, G., Vrancken, E., Sioncke, S., Opsomer, K., Nicholas, G., Caymax, M., Stesmans, A., Van Steenbergen, J., Mertens, P. W., Meuris, M., Heyns, M. M.

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Complete experimental test of kinetic models for rapid alloy solidification von Kittl, J.A., Sanders, P.G., Aziz, M.J., Brunco, D.P., Thompson, M.O.

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Interface engineering for Ge metal-oxide–semiconductor devices von Dimoulas, A., Brunco, D.P., Ferrari, S., Seo, J.W., Panayiotatos, Y., Sotiropoulos, A., Conard, T., Caymax, M., Spiga, S., Fanciulli, M., Dieker, Ch, Evangelou, E.K., Galata, S., Houssa, M., Heyns, M.M.

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Silicides and germanides for nano-CMOS applications von Kittl, J.A., Opsomer, K., Torregiani, C., Demeurisse, C., Mertens, S., Brunco, D.P., Van Dal, M.J.H., Lauwers, A.

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Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers von Simoen, E., Brouwers, G., Eneman, G., Bargallo Gonzalez, M., De Jaeger, B., Mitard, J., Brunco, D.P., Souriau, L., Cody, N., Thomas, S., Meuris, M.

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Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium von Brunco, D. P., Dimoulas, A., Boukos, N., Houssa, M., Conard, T., Martens, K., Zhao, C., Bellenger, F., Caymax, M., Meuris, M., Heyns, M. M.

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Defect engineering aspects of advanced Ge process modules von Claeys, C., Simoen, E., Opsomer, K., Brunco, D.P., Meuris, M.

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Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients von Pantisano, L., Schram, T., Li, Z., Lisoni, J. G., Pourtois, G., De Gendt, S., Brunco, D. P., Akheyar, A., Afanas’ev, V. V., Shamuilia, S., Stesmans, A.

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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators von Afanas'ev, V. V., Shamuilia, S., Stesmans, A., Dimoulas, A., Panayiotatos, Y., Sotiropoulos, A., Houssa, M., Brunco, D. P.

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Short-channel epitaxial germanium pMOS transistors von Eneman, G., De Jaeger, B., Wang, G., Mitard, J., Hellings, G., Brunco, D.P., Simoen, E., Loo, R., Caymax, M., Claeys, C., De Meyer, K., Meuris, M., Heyns, M.M.

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Germanium FETs and capacitors with rare earth CeO2/HfO2 gates von DIMOULAS, A, PANAYIOTATOS, Y, MEURIS, M, SOTIROPOULOS, A, TSIPAS, P, BRUNCO, D. P, NICHOLAS, G, VAN STEENBERGEN, J, BELLENGER, F, HOUSSA, M, CAYMAX, M

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Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory von GOVOREANU, B, WELLEKENS, D, HASPESLAGH, L, BRUNCO, D. P, DE VOS, J, RUIZ AGUADO, D, BLOMME, P, VAN DER ZANDEN, K, VAN HOUDT, J

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Germanium partitioning in silicon during rapid solidification von Brunco, D. P., Thompson, Michael O., Hoglund, D. E., Aziz, M. J., Gossmann, H.-J.

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High-Performance Deep Submicron Ge pMOSFETs With Halo Implants von Nicholas, G., De Jaeger, B., Brunco, D.P., Zimmerman, P., Eneman, G., Martens, K., Meuris, M., Heyns, M.M.

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TEMPERATURE-MEASUREMENTS OF POLYIMIDE DURING KRF EXCIMER LASER ABLATION von BRUNCO, DP, THOMPSON, MO, OTIS, CE, GOODWIN, PM

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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions von Eneman, G., Wiot, M., Brugere, A., Casain, O.S.I., Sonde, S., Brunco, D.P., De Jaeger, B., Satta, A., Hellings, G., De Meyer, K., Claeys, C., Meuris, M., Heyns, M.M., Simoen, E.

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Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams von AFANAS'EV, V. V, STESMANS, A, DELABIE, A, BELLENGER, F, HOUSSA, M, LIETEN, R. R, MERCKLING, C, PENAUD, J, BRUNCO, D. P, MEURIS, M

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High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants von Hellings, G., Mitard, J., Eneman, G., De Jaeger, B., Brunco, D.P., Shamiryan, D., Vandeweyer, T., Meuris, M., Heyns, M.M., De Meyer, K.

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