Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range von Yu, K. M., Novikov, S. V., Broesler, R., Demchenko, I. N., Denlinger, J. D., Liliental-Weber, Z., Luckert, F., Martin, R. W., Walukiewicz, W., Foxon, C. T.

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Temperature dependence of the band gap of ZnSe1−xOx von Broesler, R., Haller, E. E., Walukiewicz, W., Muranaka, T., Matsumoto, T., Nabetani, Y.

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Band gap bowing parameter of In1−xAlxN von Jones, R. E., Broesler, R., Yu, K. M., Ager, J. W., Haller, E. E., Walukiewicz, W., Chen, X., Schaff, W. J.

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Low gap amorphous GaN1−xAsx alloys grown on glass substrate von Yu, K. M., Novikov, S. V., Broesler, R., Liliental-Weber, Z., Levander, A. X., Kao, V. M., Dubon, O. D., Wu, J., Walukiewicz, W., Foxon, C. T.

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Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices von NOVIKOV, S. V, STADDON, C. R, EDWARDS, P. R, MARTIN, R. W, WALUKIEWICZ, W, FOXON, C. T, YU, K. M, BROESLER, R, HAWKRIDGE, M, LILIENTAL-WEBER, Z, DENLINGER, J, DEMCHENKO, I, LUCKERT, F

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GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates von Yu, K. M., Novikov, S. V., Broesler, R., Levander, A. X., Liliental-Weber, Z., Luckert, F., Martin, R. W., Dubon, O., Wu, J., Walukiewicz, W., Foxon, C. T.

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Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV von Yu, K. M., Novikov, S. V., Broesler, R., Staddon, C. R., Hawkridge, M., Liliental-Weber, Z., Demchenko, I., Denlinger, J. D., Kao, V. M., Luckert, F., Martin, R. W., Walukiewicz, W., Foxon, C. T.

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Amorphous GaN1−xAsx alloys for multi-junction solar cells von Broesler, R, Yu, K M, Novikov, S V, Liliental-Weber, Z, Haller, E E, Walukiewicz, W, Foxon, C T

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Resonant photoluminescent charging of epitaxial graphene von Lounis, S. D., Siegel, D. A., Broesler, R., Hwang, C. G., Haller, E. E., Lanzara, A.

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Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production von Novikov, S. V., Staddon, C. R., Foxon, C. T., Yu, K. M., Broesler, R., Hawkridge, M., Liliental-Weber, Z., Walukiewicz, W., Denlinger, J., Demchenko, I.

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Thermal stability of amorphous GaN1−xAsx alloys von Levander, A. X., Liliental-Weber, Z., Broesler, R., Hawkridge, M. E., Novikov, S. V., Foxon, C. T., Dubon, O. D., Wu, J., Walukiewicz, W., Yu, K. M.

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Temperature dependence of the band gap of ZnSe 1 − x O x von Broesler, R., Haller, E. E., Walukiewicz, W., Muranaka, T., Matsumoto, T., Nabetani, Y.

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Thermal stability of amorphous GaN 1 − x As x alloys von Levander, A. X., Liliental-Weber, Z., Broesler, R., Hawkridge, M. E., Novikov, S. V., Foxon, C. T., Dubon, O. D., Wu, J., Walukiewicz, W., Yu, K. M.

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Low gap amorphous GaN 1 − x As x alloys grown on glass substrate von Yu, K. M., Novikov, S. V., Broesler, R., Liliental-Weber, Z., Levander, A. X., Kao, V. M., Dubon, O. D., Wu, J., Walukiewicz, W., Foxon, C. T.

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Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8eV for solar energy conversion devices von Novikov, S.V., Staddon, C.R., Foxon, C.T., Yu, K.M., Broesler, R., Hawkridge, M., Liliental-Weber, Z., Denlinger, J., Demchenko, I., Luckert, F., Edwards, P.R., Martin, R.W., Walukiewicz, W.

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Thermal stability of amorphous GaN{sub 1-x}As{sub x} alloys von Levander, A. X., Broesler, R., Dubon, O. D., Wu, J., Department of Materials Science and Engineering, University of California, Berkeley, California 94720, Liliental-Weber, Z., Hawkridge, M. E., Walukiewicz, W., Yu, K. M., Novikov, S. V., Foxon, C. T.

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Highly mismatched crystalline and amorphous GaN 1 − x As x alloys in the whole composition range von Yu, K. M., Novikov, S. V., Broesler, R., Demchenko, I. N., Denlinger, J. D., Liliental-Weber, Z., Luckert, F., Martin, R. W., Walukiewicz, W., Foxon, C. T.

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Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x} von Broesler, R., Haller, E. E., Department of Materials Science and Engineering, University of California, Berkeley, California 94720, Walukiewicz, W., Muranaka, T., Matsumoto, T., Nabetani, Y.

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Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range von Yu, K. M., Novikov, S. V., Broesler, R., Demchenko, I. N., Denlinger, J. D., Liliental-Weber, Z., Luckert, F., Martin, R. W., Walukiewicz, W., Foxon, C. T.

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Low gap amorphous GaN{sub 1-x}As{sub x} alloys grown on glass substrate von Yu, K. M., Liliental-Weber, Z., Kao, V. M., Walukiewicz, W., Novikov, S. V., Foxon, C. T., Broesler, R., Levander, A. X., Dubon, O. D., Wu, J., Department of Materials Science and Engineering, University of California, Berkeley, California 94720

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