IR spectroscopic determination of the refractive index and thickness of hydrogenated silicon layers von Timoshenkov, S. P., Pelipas, V. P., Simonov, B. M., Britkov, O. M., Kalugin, V. V.

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IR spectroscopic study of hydrogenated silicon layers von Timoshenkov, S. P., Britkov, O. M., Kalugin, V. V., Lapitskii, Yu. Ya, Pelipas, V. P., Simonov, B. M.

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Study of radiation-induced damage to type III–V semiconductor compounds irradiated with γ quanta and protons using positron annihilation spectroscopy von Grafutin, V. I., Britkov, I. M., Britkov, O. M., Evstaf’ev, S. S., Ilyukhina, O. V., Myasishcheva, G. G., Prokop’ev, E. P., Timoshenkov, S. P., Funtikov, Yu. V.

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Positron states and nanoobjects in proton-irradiated quartz single crystals: Positronium atom in quartz von Grafutin, V. I., Zaluzhnyi, A. G., Timoshenkov, S. P., Britkov, O. M., Ilyukhina, O. V., Myasishcheva, G. G., Prokop’ev, E. P., Funtikov, Yu. V.

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Study of radiation damage in quartz single crystals irradiated with protons von Grafutin, V. I., Zaluzhnyi, A. G., Timoshenkov, S. P., Britkov, O. M., Ilyukhina, O. V., Myasishcheva, G. G., Prokop’ev, E. P., Funtikov, Yu. V.

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A positron annihilation spectroscopy study of porous silicon von Britkov, O. M., Gavrilov, S. A., Grafutin, V. I., Kalugin, V. V., Ilyukhina, O. V., Myasishcheva, G. G., Prokop’ev, E. P., Timoshenkov, S. P., Funtikov, Yu. V.

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LFM-700 multifunctional measuring device for CTV von Britkov, A.V., Gorbanov, N.A., Sviridenko, V.I., Nosov, O.S., Gontarev, V.T., Tarasov, M.A., Prohorenko, A.V., Dyachenko, V.N.

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