Applications of depth-resolved cathodoluminescence spectroscopy von Brillson, L J

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Direct observation of a two-dimensional hole gas at oxide interfaces von Lee, H., Campbell, N., Lee, J., Asel, T. J., Paudel, T. R., Zhou, H., Lee, J. W., Noesges, B., Seo, J., Park, B., Brillson, L. J., Oh, S. H., Tsymbal, E. Y., Rzchowski, M. S., Eom, C. B.

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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO von Mosbacker, H. L., Strzhemechny, Y. M., White, B. D., Smith, P. E., Look, D. C., Reynolds, D. C., Litton, C. W., Brillson, L. J.

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Nanostructure growth-induced defect formation and band bending at ZnO surfaces von Merz, T.A., Doutt, D.R., Bolton, T., Dong, Y., Brillson, L.J.

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Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films von Brillson, L. J.

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Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries von Hetzer, M. J., Strzhemechny, Y. M., Gao, M., Contreras, M. A., Zunger, A., Brillson, L. J.

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Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces von Brillson, L.J., Mosbacker, H.L., Hetzer, M.J., Strzhemechny, Y., Look, D.C., Cantwell, G., Zhang, J., Song, J.J.

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Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation von Brillson, L.J., Dong, Y., Doutt, D., Look, D.C., Fang, Z.-Q.

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First-Principles Studies of Metal (111)/ZnO{0001} Interfaces von Dong, Yufeng, Brillson, L.J.

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Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies von Hauser, A. J., Zhang, J., Mier, L., Ricciardo, R. A., Woodward, P. M., Gustafson, T. L., Brillson, L. J., Yang, F. Y.

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Defect segregation and optical emission in ZnO nano- and microwires von Ruane, W T, Johansen, K M, Leedy, K D, Look, D C, von Wenckstern, H, Grundmann, M, Farlow, G C, Brillson, L J

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Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence von White, B.D., Bataiev, M., Goss, S.H., Hu, X., Karmarkar, A., Fleetwood, D.M., Schrimpf, R.D., Schaff, W.J., Brillson, L.J.

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Optical identification of oxygen vacancy formation at SrTiO3-(Ba,Sr)TiO3 heterostructures von Rutkowski, M M, McNicholas, K, Zeng, Z Q, Tuomisto, F, Brillson, L J

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Dominant effect of near-interface native point defects on ZnO Schottky barriers von Brillson, L. J., Mosbacker, H. L., Hetzer, M. J., Strzhemechny, Y., Jessen, G. H., Look, D. C., Cantwell, G., Zhang, J., Song, J. J.

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Process dependence of H passivation and doping in H-implanted ZnO von Zhang, Z, Look, D C, Schifano, R, Johansen, K M, Svensson, B G, Brillson, L J

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Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices von Brillson, L. J., Foster, G. M., Cox, J., Ruane, W. T., Jarjour, A. B., Gao, H., von Wenckstern, H., Grundmann, M., Wang, B., Look, D. C., Hyland, A., Allen, M. W.

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Impact of ultrathin Al2O3 diffusion barriers on defects in high-k LaLuO3 on Si von Shen, S., Liu, Y., Gordon, R. G., Brillson, L. J.

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Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states von Ewing, D. J., Porter, L. M., Wahab, Q., Ma, X., Sudharshan, T. S., Tumakha, S., Gao, M., Brillson, L. J.

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Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy von Miller, E. J., Schaadt, D. M., Yu, E. T., Sun, X. L., Brillson, L. J., Waltereit, P., Speck, J. S.

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Depth-resolved subsurface defects in chemically etched SrTiO3 von Zhang, Jun, Doutt, D., Merz, T., Chakhalian, J., Kareev, M., Liu, J., Brillson, L. J.

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