The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE von Brighten, J.C., Kubiak, R.A., Phillips, P.J., Whall, T.E., Parker, E.H.C., Hawkins, I.D., Peaker, A.R.

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Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C von Powell, A.R., Kubiak, R.A.A., Newstead, S.M., Parry, C., Mattey, N.L., Smith, D.W., Brighten, J.C., Emeleus, C.J., Naylor, T., Basaran, E., Whall, T.E., Dowsett, M.G., Barlow, R.D., Parker, E.H.C., Bowen, D.K.

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