Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs von Mulaosmanovic, Halid, Muller, Franz, Lederer, Maximilian, Ali, Tarek, Hoffmann, Raik, Seidel, Konrad, Zhou, Haidi, Ocker, Johannes, Mueller, Stefan, Dunkel, Stefan, Kleimaier, Dominik, Muller, Johannes, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

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Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance von Mulaosmanovic, Halid, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

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Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory von Breyer, Evelyn T., Mulaosmanovic, Halid, Trommer, Jens, Melde, Thomas, Dunkel, Stefan, Trentzsch, Martin, Beyer, Sven, Slesazeck, Stefan, Mikolajick, Thomas

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A FeFET-Based Hybrid Memory Accessible by Content and by Address von Marchand, Cedric, O'Connor, Ian, Cantan, Mayeul, Breyer, Evelyn T., Slesazeck, Stefan, Mikolajick, Thomas

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Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing von Breyer, Evelyn T., Mulaosmanovic, Halid, Mikolajick, Thomas, Slesazeck, Stefan

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Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior von Mulaosmanovic, Halid, Dunkel, Stefan, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

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Reconfigurable frequency multiplication with a ferroelectric transistor von Mulaosmanovic, Halid, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

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Ferroelectric FETs With 20-nm-Thick HfO 2 Layer for Large Memory Window and High Performance von Mulaosmanovic, Halid, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

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Ferroelectric field-effect transistors based on HfO 2 : a review von Mulaosmanovic, Halid, Breyer, Evelyn T, Dünkel, Stefan, Beyer, Sven, Mikolajick, Thomas, Slesazeck, Stefan

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Interplay Between Switching and Retention in HfO 2 -Based Ferroelectric FETs von Mulaosmanovic, Halid, Muller, Franz, Lederer, Maximilian, Ali, Tarek, Hoffmann, Raik, Seidel, Konrad, Zhou, Haidi, Ocker, Johannes, Mueller, Stefan, Dunkel, Stefan, Kleimaier, Dominik, Muller, Johannes, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

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Frequency Mixing with HfO 2 -Based Ferroelectric Transistors von Mulaosmanovic, Halid, Dünkel, Stefan, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

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Impact of Read Operation on the Performance of HfO 2 -Based Ferroelectric FETs von Mulaosmanovic, Halid, Dunkel, Stefan, Muller, Johannes, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

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A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device von Pešić, Milan, Künneth, Christopher, Hoffmann, Michael, Halid Mulaosmanovic, Müller, Stefan, Breyer, Evelyn T, Schroeder, Uwe, Kersch, Alfred, Mikolajick, Thomas, Slesazeck, Stefan

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Electrical Interface Characterization of Ultrathin Amorphous Silicon Layers on Crystalline Silicon von Thoma, Patrick, Breyer, Evelyn Tina, Thoma, Oana‐Maria, Salvan, Georgeta, Zahn, Dietrich R. T.

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Stratification within centrifuged amoeba nuclei von Daniels, Edward W., Breyer, Evelyn P.

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Differences in Mitochondrial Fine Structure During Mitosis in Amoebae von DANIELS, EDWARD W., BREYER, EVELYN

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