Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy von Wang, L., Chauveau, J. M., Brenier, R., Sallet, V., Jomard, F., Sartel, C., Brémond, G.

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Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy von Wang, L., Laurent, J., Chauveau, J. M., Sallet, V., Jomard, F., Brémond, G.

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Doubly hybrid density functional xDH-PBE0 from a parameter-free global hybrid model PBE0 von Zhang, Igor Ying, Su, Neil Qiang, Brémond, Éric A. G., Adamo, Carlo, Xu, Xin

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Charge photo-carrier transport from silicon nanocrystals embedded in SiO2-based multilayer structures von Dridi Rezgui, B., Gourbilleau, F., Maestre, D., Palais, O., Sibai, A., Lemiti, M., Brémond, G.

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Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) von Brault, J., Gendry, M., Grenet, G., Hollinger, G., Olivares, J., Salem, B., Benyattou, T., Bremond, G.

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Strain dependence of indirect band gap for strained silicon on insulator wafers von Munguía, J., Bremond, G., Bluet, J. M., Hartmann, J. M., Mermoux, M.

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Silicon nanostructures for solar cell applications von Gourbilleau, F., Dufour, C., Rezgui, B., Brémond, G.

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Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer von Munguía, J., Bluet, J.-M., Marty, O., Bremond, G., Mermoux, M., Rouchon, D.

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From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) von Gendry, M., Monat, C., Brault, J., Regreny, P., Hollinger, G., Salem, B., Guillot, G., Benyattou, T., Bru-chevallier, C., Bremond, G., Marty, O.

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Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001) von Miska, P., Even, J., Platz, C., Salem, B., Benyattou, T., Bru-Chevalier, C., Guillot, G., Bremond, G., Moumanis, Kh, Julien, F. H., Marty, O., Monat, C., Gendry, M.

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Strain dependence of the direct energy bandgap in thin silicon on insulator layers von Munguía, J, Bluet, J-M, Chouaib, H, Bremond, G, Mermoux, M, Bru-Chevallier, C

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Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs∕InP(001) quantum dot von Saint-Girons, G., Chauvin, N., Michon, A., Patriarche, G., Beaudoin, G., Brémond, G., Bru-Chevallier, C., Sagnes, I.

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Carrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopy von Lin (林振), Z, Brunkov, P, Bassani, F, Descamps, A, O'Dwyer, C, Bremond, G

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Influence of the chemical properties of the substrate on silicon quantum dot nucleation von MAZEN, F, BARON, T, BREMOND, G, BUFFET, N, ROCHAT, N, MUR, P, SEMERIA, M. N

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Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial von Marty, O., Nychyporuk, T., de la Torre, J., Lysenko, V., Bremond, G., Barbier, D.

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Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots von Chauvin, N., Salem, B., Bremond, G., Guillot, G., Bru-Chevallier, C., Gendry, M.

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Using silicon nanostructures for the improvement of silicon solar cells' efficiency von De la Torre, J., Bremond, G., Lemiti, M., Guillot, G., Mur, P., Buffet, N.

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Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD von Lelièvre, J.-F., De la Torre, J., Kaminski, A., Bremond, G., Lemiti, M., El Bouayadi, Rachid, Araujo, Daniel, Epicier, Thierry, Monna, R., Pirot, M., Ribeyron, P.-J., Jaussaud, C.

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Electrical properties of self-assembled InAs/InAlAs quantum dots on InP von Hamdaoui, N, Ajjel, R, Maaref, H, Salem, B, Bremond, G, Gendry, M

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Deep levels investigation of AlGaN/GaN heterostructure transistors von Chikhaoui, W., Bluet, J.M., Girard, P., Bremond, G., Bru-Chevallier, C., Dua, C., Aubry, R.

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