Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method von Bremner, S. P., Levy, M. Y., Honsberg, C. B.

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Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces von Bremner, S.P., Ghosh, K., Nataraj, L., Cloutier, S.G., Honsberg, C.B.

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Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system von Pancholi, A., Bremner, S.P., Boyle, J., Stoleru, V.G., Honsberg, C.B.

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Optimum band gap combinations to make best use of new photovoltaic materials von Bremner, S.P., Yi, C., Almansouri, I., Ho-Baillie, A., Green, M.A.

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Effect of Sb and As spray on emission characteristics of InAs quantum dots with AlAs capping layer von Zhang, Z, Tan, S, Kim, Y, Liu, Z, Reece, P J, Bremner, S P

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The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution von Ikpi, M.E., Atkinson, P., Bremner, S.P., Ritchie, D.A.

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Site-Control of InAs Quantum Dots using Ex-Situ Electron-Beam Lithographic Patterning of GaAs Substrates von Atkinson, P., Ward, M. B., Bremner, S. P., Anderson, D., Farrow, T., Jones, G. A. C., Shields, A. J., Ritchie, D. A.

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Corrigendum to “Optimum band gap combinations to make best use of new photovoltaic materials” [Solar Energy 135 (2016) 750–757] von Bremner, S.P., Yi, C., Almansouri, I., Ho-Baillie, A., Green, M.A.

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Distribution of self-assembled InAs dots on patterned GaAs (1 0 0) substrates von Ikpi, M.E., Atkinson, P., Bremner, S.P., Ritchie, D.A.

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Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth von Ikpi, M E, Atkinson, P, Bremner, S P, Ritchie, D A

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Investigation of the selectivity-mechanism of copper (I) sulfide (Cu2S) as a dopant-free carrier selective contact for silicon solar cells von Sun, Z., Yi, C., Hameiri, Z., Bremner, S.P.

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Surface-acoustic-wave-driven luminescence from a lateral p - n junction von Gell, J. R., Atkinson, P., Bremner, S. P., Sfigakis, F., Kataoka, M., Anderson, D., Jones, G. A. C., Barnes, C. H. W., Ritchie, D. A., Ward, M. B., Norman, C. E., Shields, A. J.

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Growth and characterization of GaAs1−xSbx barrier layers for advanced concept solar cells von Bremner, S. P., Liu, G. M., Faleev, N., Ghosh, K., Honsberg, C. B.

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Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates von Atkinson, P., Ward, M.B., Bremner, S.P., Anderson, D., Farrow, T., Jones, G.A.C., Shields, A.J., Ritchie, D.A.

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Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates von Zhang, Z., Ghosh, K., Faleev, N.N., Wang, H., Honsberg, C.B., Reece, P., Bremner, S.P.

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Temporal isolation of surface-acoustic-wave-driven luminescence from a lateral p–n junction using pulsed techniques von Gell, J.R., Ward, M.B., Atkinson, P., Bremner, S.P., Anderson, D., Norman, C.E., Kataoka, M., Barnes, C.H.W., Jones, G.A.C., Shields, A.J., Ritchie, D.A.

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Photoluminescence of antimony sprayed indium arsenide quantum dots for novel photovoltaic devices von Bray, T., Zhao, Y., Reece, P., Bremner, S. P.

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Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001) von Bremner, S. P., Ban, K.-Y., Faleev, N. N., Honsberg, C. B., Smith, D. J.

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Controlling spontaneous emission from quantum dots using photonic crystal microcavities von Gevaux, D. G., Atkinson, P., Anderson, D., Bennett, A. J., Bremner, S. P., Griffiths, J., Ellis, D. J. P., Stevenson, R. M., Jones, G. A. C., Ritchie, D. A., Shields, A. J.

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Design trade-offs and rules for multiple energy level solar cells von Honsberg, C.B, Bremner, S.P, Corkish, R

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