Characterization of interfacial growth between Bi(2212) and Ag coating von Breitwisch, M.J., Kouzoudis, D., Ostenson, J.E., Finnemore, D.K., Balachandran, U.

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Estimation of amorphous fraction in multilevel phase change memory cells von Papandreou, N., Pantazi, A., Sebastian, A., Eleftheriou, E., Breitwisch, M.J., Lam, C., Pozidis, H.

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Demonstration of CAM and TCAM Using Phase Change Devices von Rajendran, B, Cheek, R W, Lastras, L A, Franceschini, M M, Breitwisch, M J, Schrott, A G, Jing Li, Montoye, R K, Chang, Leland, Chung Lam

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A novel CMOS compatible embedded nonvolatile memory with zero process adder von Breitwisch, M.J., Lam, C.H., Johnson, J.B., Mittl, S.W.W., Zhu, J.W.

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MELANIN ORNAMENTS, HONESTY, AND SEXUAL SELECTION von Jawor, Jodie M, Breitwisch, Randall

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Multiple ornaments correlate with aspects of condition and behaviour in female northern cardinals, Cardinalis cardinalis von Jawor, Jodie M, Gray, Nick, Beall, Sara M, Breitwisch, Randall

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Assortative mating by multiple ornaments in northern cardinals (Cardinalis cardinalis) von Jawor, Jodie M., Linville, Susan U., Beall, Sara M., Breitwisch, Randall

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Multiple Ornaments in Male Northern Cardinals, Cardinalis cardinalis, as Indicators of Condition von Jawor, Jodie M., Breitwisch, Randall

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Novel Lithography-Independent Pore Phase Change Memory von Breitwisch, M., Nirschl, T., Chen, C.F., Zhu, Y., Lee, M.H., Lamorey, M., Burr, G.W., Joseph, E., Schrott, A., Philipp, J.B., Cheek, R., Happ, T.D., Chen, S.H., Zaidr, S., Flaitz, P., Bruley, J., Dasaka, R., Rajendran, B., Rossnage, S., Yang, M., Chen, Y.C., Bergmann, R., Lung, H.L., Lam, C.

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Noise margin and leakage in ultra-low leakage SRAM cell design von Hook, T.B., Breitwisch, M., Brown, J., Cottrell, P., Hoyniak, D., Chung Lam, Mann, R.

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High-performance logic and high-gain analog CMOS transistors formed by a shadow-mask technique with a single implant step von Hook, T.B., Brown, J.S., Breitwisch, M., Hoyniak, D., Mann, R.

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Melanin Ornaments, Honesty, And Sexual Selection von Jawor, J M, Breitwisch, R

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Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials von Shenoy, R. S., Gopalakrishnan, K., Jackson, B., Virwani, K., Burr, G. W., Rettner, C. T., Padilla, A., Bethune, D. S., Shelby, R. M., Kellock, A. J., Breitwisch, M., Joseph, E. A., Dasaka, R., King, R. S., Nguyen, K., Bowers, A. N., Jurich, M., Friz, A. M., Topuria, T., Rice, P. M., Kurdi, B. N.

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Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory von Nirschl, T., Chen, C.-F., Joseph, E., Lamorey, M., Cheek, R., Chen, S.-H., Zaidi, S., Raoux, S., Chen, Y.C., Zhu, Y., Bergmann, R., Philipp, J.B., Lung, H.-L., Lam, C., Happ, T.D., Burr, G.W., Rajendran, B., Lee, M.-H., Schrott, A., Yang, M., Breitwisch, M.

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Novel One-Mask Self-Heating Pillar Phase Change Memory von Happ, T., Breitwisch, M., Schrott, A., Philipp, J., Lee, M., Cheek, R., Nirschl, T., Lamorey, M., Ho, C., Chen, S.H., Chen, C.F., Joseph, E., Zaidi, S., Burr, G., Yee, B., Chen, Y.C., Raoux, S., Lung, H., Bergmann, R., Lam, C.

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Optimization of programming current on endurance of phase change memory von Kim, S., Du, P. Y., Li, J., Breitwisch, M., Zhu, Y., Mittal, S., Cheek, R., Hsu, T.-H, Lee, M. H., Schrott, A., Raoux, S., Cheng, H. Y., Lai, S.-C, Wu, J. Y., Wang, T. Y., Joseph, E. A., Lai, E. K., Ray, A., Lung, H.-L, Lam, C.

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A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems von Lung, H. L., Breitwisch, M., Wu, J. Y., Du, P., Zhu, Y., Lee, M. H., Shih, Y. H., Lai, E. K., Dasaka, R., Wang, T. Y., Chen, C. F., Cheek, R., Schrott, A., Joseph, E., Cheng, H. Y., Raoux, S., Lam, C.

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Ultra-Thin Phase-Change Bridge Memory Device Using GeSb von Chen, Y.C., Rettner, C.T., Raoux, S., Burr, G.W., Chen, S.H., Shelby, R.M., Salinga, M., Risk, W.P., Happ, T.D., McClelland, G.M., Breitwisch, M., Schrott, A., Philipp, J.B., Lee, M.H., Cheek, R., Nirschl, T., Lamorey, M., Chen, C.F., Joseph, E., Zaidi, S., Yee, B., Lung, H.L., Bergmann, R., Lam, C.

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RF FET layout and modeling for design success in RFCMOS technologies von Jagannathan, B., Greenberg, D., Anna, R., Wang, X., Pekarik, J., Breitwisch, M., Erturk, M., Wagner, L., Schnabel, C., Sanderson, D., Csutak, S.

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A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material von Cheng, H. Y., Hsu, T. H., Raoux, S., Wu, J. Y., Du, P. Y., Breitwisch, M., Zhu, Y., Lai, E. K., Joseph, E., Mittal, S., Cheek, R., Schrott, A., Lai, S. C., Lung, H. L., Lam, C.

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