Shallow Si donor in ion-implanted homoepitaxial AlN von Hayden Breckenridge, M., Guo, Qiang, Klump, Andrew, Sarkar, Biplab, Guan, Yan, Tweedie, James, Kirste, Ronny, Mita, Seiji, Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko

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High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates von Reddy, Pramod, Hayden Breckenridge, M., Guo, Qiang, Klump, Andrew, Khachariya, Dolar, Pavlidis, Spyridon, Mecouch, Will, Mita, Seiji, Moody, Baxter, Tweedie, James, Kirste, Ronny, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko

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High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing von Breckenridge, M. Hayden, Tweedie, James, Reddy, Pramod, Guan, Yan, Bagheri, Pegah, Szymanski, Dennis, Mita, Seiji, Sierakowski, Kacper, Boćkowski, Michał, Collazo, Ramon, Sitar, Zlatko

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High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN von Breckenridge, M. Hayden, Bagheri, Pegah, Guo, Qiang, Sarkar, Biplab, Khachariya, Dolar, Pavlidis, Spyridon, Tweedie, James, Kirste, Ronny, Mita, Seiji, Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko

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Doping and compensation in heavily Mg doped Al-rich AlGaN films von Bagheri, Pegah, Klump, Andrew, Washiyama, Shun, Hayden Breckenridge, M., Kim, Ji Hyun, Guan, Yan, Khachariya, Dolar, Quiñones-García, Cristyan, Sarkar, Biplab, Rathkanthiwar, Shashwat, Reddy, Pramod, Mita, Seiji, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

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The polarization field in Al-rich AlGaN multiple quantum wells von Guo, Qiang, Kirste, Ronny, Mita, Seiji, Tweedie, James, Reddy, Pramod, Washiyama, Shun, Breckenridge, M. Hayden, Collazo, Ramón, Sitar, Zlatko

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Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates von Reddy, Pramod, Mecouch, Will, Hayden Breckenridge, M., Khachariya, Dolar, Bagheri, Pegah, Hyun Kim, Ji, Guan, Yan, Mita, Seiji, Moody, Baxter, Tweedie, James, Pavlidis, Spyridon, Kirste, Ronny, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko

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High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies von Reddy, Pramod, Washiyama, Shun, Kaess, Felix, Hayden Breckenridge, M., Hernandez-Balderrama, Luis H., Haidet, Brian B., Alden, Dorian, Franke, Alexander, Sarkar, Biplab, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko

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Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD von Bryan, Isaac, Bryan, Zachary, Washiyama, Shun, Reddy, Pramod, Gaddy, Benjamin, Sarkar, Biplab, Breckenridge, M. Hayden, Guo, Qiang, Bobea, Milena, Tweedie, James, Mita, Seiji, Irving, Douglas, Collazo, Ramon, Sitar, Zlatko

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Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates von Khachariya, Dolar, Mita, Seiji, Reddy, Pramod, Dangi, Saroj, Dycus, J. Houston, Bagheri, Pegah, Breckenridge, M. Hayden, Sengupta, Rohan, Rathkanthiwar, Shashwat, Kirste, Ronny, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon

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Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN von Reddy, Pramod, Khachariya, Dolar, Mecouch, Will, Breckenridge, M. Hayden, Bagheri, Pegah, Guan, Yan, Kim, Ji Hyun, Pavlidis, Spyridon, Kirste, Ronny, Mita, Seiji, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko

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On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers von Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M. Hayden, Reddy, Pramod, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon

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Role of polarity in SiN on Al/GaN and the pathway to stable contacts von Reddy, Pramod, Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M Hayden, Sarkar, Biplab, Pavlidis, Spyridon, Collazo, Ramón, Sitar, Zlatko, Kohn, Erhard

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Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping von Washiyama, Shun, Mirrielees, Kelsey J., Bagheri, Pegah, Baker, Jonathon N., Kim, Ji-Hyun, Guo, Qiang, Kirste, Ronny, Guan, Yan, Breckenridge, M. Hayden, Klump, Andrew J., Reddy, Pramod, Mita, Seiji, Irving, Douglas L., Collazo, Ramón, Sitar, Zlatko

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Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition von Reddy, Pramod, Washiyama, Shun, Mecouch, Will, Hernandez-Balderrama, Luis H., Kaess, Felix, Hayden Breckenridge, M., Sarkar, Biplab, Haidet, Brian B., Franke, Alexander, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko

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N- and P- type Doping in Al-rich AlGaN and AlN von Sarkar, Biplab, Washiyama, Shun, Breckenridge, M. Hayden, Klump, Andrew, Baker, Jonathon N., Reddy, Pramod, Tweedie, James, Mita, Seiji, Kirste, Ronny, Irving, Doug L., Collazo, Ramon, Sitar, Zlatko

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On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers von Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M. Hayden, Reddy, Pramod, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon

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Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing von Khachariya, Dolar, Stein, Shane, Mecouch, Will, Breckenridge, M. Hayden, Rathkanthiwar, Shashwat, Mita, Seiji, Moody, Baxter, Reddy, Pramod, Tweedie, James, Kirste, Ronny, Sierakowski, Kacper, Kamler, Grzegorz, Bockowski, Michal, Kohn, Erhard, Pavlidis, Spyridon, Collazo, Ramón, Sitar, Zlatko

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High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN von Breckenridge, M. Hayden, Bagheri, Pegah, Guo, Qiang, Sarkar, Biplab, Khachariya, Dolar, Pavlidis, Spyridon, Tweedie, James, Kirste, Ronny, Mita, Seiji, Reddy, Pramod, Collazo, Ramón, Sitar, Zlatko

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High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing von Breckenridge, M. Hayden, Tweedie, James, Reddy, Pramod, Guan, Yan, Bagheri, Pegah, Szymanski, Dennis, Mita, Seiji, Sierakowski, Kacper, Boćkowski, Michał, Collazo, Ramon, Sitar, Zlatko

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