The Hupsel Brook Catchment: Insights from Five Decades of Lowland Observations von Brauer, C.C., Velde, Y., Teuling, A.J., Uijlenhoet, R.

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Daily flow simulation in Thailand Part I: Testing a distributed hydrological model with seamless parameter maps based on global data von Wannasin, C., Brauer, C.C., Uijlenhoet, R., van Verseveld, W.J., Weerts, A.H.

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Daily flow simulation in Thailand Part II: Unraveling effects of reservoir operation von Wannasin, C., Brauer, C.C., Uijlenhoet, R., van Verseveld, W.J., Weerts, A.H.

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The Wageningen Lowland Runoff Simulator (WALRUS): a lumped rainfall–runoff model for catchments with shallow groundwater von Brauer, C. C, Teuling, A. J, Torfs, P. J. J. F, Uijlenhoet, R

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Investigating storage-discharge relations in a lowland catchment using hydrograph fitting, recession analysis, and soil moisture data von Brauer, C. C., Teuling, A. J., Torfs, P. J. J. F., Uijlenhoet, R.

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The Wageningen Lowland Runoff Simulator (WALRUS): application to the Hupsel Brook catchement and Cabauw polder von Brauer, C.C, Torfs, P.J.J.F, Teuling, A.J, Uijlenhoet, R

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Anatomy of extraordinary rainfall and flash flood in a Dutch lowland catchment von Brauer, C. C., Teuling, A. J., Overeem, A., van der Velde, Y., Hazenberg, P., Warmerdam, P. M. M., Uijlenhoet, R.

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Modelling (flash) floods in a Dutch lowland catchment von Brauer, C.C, Teuling, A.J, Overeem, A, Velde, Y. van der, Hazenberg, P, Warmerdam, P.M.M, Kloosterman, P, Uijlenhoet, R

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Oeffentliche Kirchen-Gesänge von Martin Luther, Gedruckt bey Hermann Brauer, C.C. Hochw. Raths-Buchdr

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Oeffentliche Kirchen-Gesänge

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Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition von Chen, Y. N., Xu, S. J., Zheng, C. C., Ning, J. Q., Ling, F. C. C., Anwand, W., Brauer, G., Skorupa, W.

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On the T2 trap in zinc oxide thin films von Schmidt, Matthias, Ellguth, Martin, Karsthof, Robert, v. Wenckstern, Holger, Pickenhain, Rainer, Grundmann, Marius, Brauer, Gerhard, Ling, Francis C. C.

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Defect study in ZnO related structures—A multi-spectroscopic approach von Ling, C.C., Cheung, C.K., Gu, Q.L., Dai, X.M., Xu, S.J., Zhu, C.Y., Luo, J.M., Tam, K.H., Djurišić, A.B., Beling, C.D., Fung, S., Lu, L.W., Brauer, G., Anwand, W., Skorupa, W., Ong, H.C.

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Deep-level defects in n -type 6H silicon carbide induced by He implantation von Ling, C. C., Chen, X. D., Brauer, G., Anwand, W., Skorupa, W., Wang, H. Y., Weng, H. M.

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Primary photoluminescence in as-neutron (electron) -irradiated n -type 6H-SiC von Zhong, Z. Q., Wu, D. X., Gong, M., Wang, O., Shi, S. L., Xu, S. J., Chen, X. D., Ling, C. C., Fung, S., Beling, C. D., Brauer, G., Anwand, W., Skorupa, W.

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Anomalous behaviors of E{sub 1}/E{sub 2} deep level defects in 6H silicon carbide von Chen, X.D., Ling, C.C., Gong, M., Fung, S., Beling, C.D., Brauer, G., Anwand, W., Skorupa, W., Department of Physics, Sichuan University, Chengdu, Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong, Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, D-01314 Dresden

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Deep-level defects study of arsenic-implanted ZnO single crystal von Zhu, C.Y., Ling, C.C., Brauer, G., Anwand, W., Skorupa, W.

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Positron Mobility in Semi-Insulating 4H-SiC von Ling, C.C., Cheung, S.H., Beling, C.D., Brauer, Gerhard, Fung, S., Hu, Y.F., Gong, M.

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